Abstract

A process for forming silicon nitride layers on silicon substrates which includes initially heating the silicon substrates in a rapid thermal processor and in a substantially oxygen-free and residual moisture free environment to form a thin Si3 N4 layer directly on the silicon surface which is free of any measurable native SiO2 thereon. Then, the nitridized wafers are transferred into a conventional nitride furnace where the thin Si3 N4 layers may be increased in thickness by a desired amount. Typically, the initial or first Si3 N4 layer thickness will be about 10-30 angstroms and the second Si3 N4 layer will be on the order of 80 angstroms or more to form a composite Si3 N4 layer of about 100-150 angstroms in total thickness. This novel process and the high dielectric constant integrated circuit capacitors produced thereby are highly useful in the manufacture of certain very large scale integrated circuit (VLSI) components such as dynamic random access memories and the like.