U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Fluid flow control method and apparatus for minimizing particle contamination

Patent 5031674 Issued on July 16, 1991. Estimated Expiration Date: Icon_subject September 21, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3724874

Self-clocking magnetic record sensing system
Patent #: 3962726
Issued on: 06/08/1976
Inventor: De Land, Jr.

Method of producing a high vacuum in a container
Patent #: 4181161
Issued on: 01/01/1980
Inventor: Kraus

Method and apparatus for improved ion dose accuracy
Patent #: 4680474
Issued on: 07/14/1987
Inventor: Turner ,   et al.

Method and apparatus for improving the yield of integrated circuit devices
Patent #: 4739787
Issued on: 04/26/1988
Inventor: Stoltenberg

Apparatus for loading and unloading a vacuum processing chamber
Patent #: 4797054
Issued on: 01/10/1989
Inventor: Arii

Method and apparatus for venting vacuum processing equipment Patent #: 4836233
Issued on: 06/06/1989
Inventor: Milgate, III

Inventor

Application

No. 585914 filed on 09/21/1990

US Classes:

141/66, With filling with gas137/14, Involving pressure control137/487.5, Electrically actuated valve141/8, Vacuum250/492.2Irradiation of semiconductor devices

Examiners

Primary: Recla, Henry J.
Assistant: Jacyna, Casey

Attorney, Agent or Firm

International Classes

G05D 016/00
F16K 024/04

Abstract

A fluid flow control for use with a process chamber. In the disclosed embodiment, the process chamber is for ion implantation of a workpiece and the fluid flow control is to assure the flow rates are maintained at values which are efficient in evacuating and pressurizing the chamber but are not high enough to dislodge particulate contaminate from the process chamber walls. In the disclosed design, the invention has utility both in instances in which wafers are directly inserted into the process chamber for ion implantation and in which the wafers are inserted into the chamber by use of a load-lock which avoids the requirement that the process chamber be cyclicly pressurized and depressurized.

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