Method for forming a thin layer on a semiconductor substrate
March 1, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3773578 Method of gas doping of vacuum evaporated epitaxial silicon films Native oxide technique for preparing clean substrate surfaces Method of growing epitaxial semiconductor films utilizing radiant heating Oxide masking of gallium arsenide Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces Hydrogen etching of semiconductors and oxides Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate Process and apparatus for fabricating a semiconductor device Method of coating optical components InventorsApplicationNo. 317710 filed on 03/01/1989US Classes:438/482, Amorphous semiconductor117/106, With pretreatment or preparation of a base (e.g., annealing)257/E21.123, Substrate is crystalline semiconductor material, e.g., lattice adaptation, heteroepitaxy (EPO)257/E21.224, Chemical cleaning (EPO)257/E21.279, On silicon body (EPO)257/E21.285, Of silicon (EPO)257/E21.293, Of silicon nitride (EPO)438/488, Polycrystalline semiconductor438/909, CONTROLLED ATMOSPHERE438/974SUBSTRATE SURFACE PREPARATIONExaminersPrimary: Chaudhuri, OlikAssistant: Bunch, William Attorney, Agent or FirmForeign Patent References
International ClassH01L 021/20Foreign Application Priority Data1988-06-21 JPAbstractA method and apparatus for manufacturing a semiconductor device having a thin layer of material formed on a semiconductor substrate with a much improved interface between them are disclosed. A silicon substrate is heated up to a temperature around 300° C. in the presence of ozone gas under exposure to UV light. Through this process, organic contaminants that might be present on the surface of the silicon substrate are dissipated by oxidation, and a thin oxide film is formed on the substrate surface on the other. The silicon substrate with the thin oxide film coated thereon is then heated up to temperature of 200°-700° C. in the presence of HCl gas under illumination to UV light to strip the oxide film off the substrate surface, thereby exposing the cleaned substrate surface. Finally, HCl cleaned surface of the silicon substrate is coated with a thin layer of material such as monocrystalline silicon without exposing the cleaned substrate surface. The method provides a semiconductor device with the thin layer of material formed thereon having a well-controlled, well-organized interface between them.Other References
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