High level wide band RF mixer
Patent 5027163 Issued on June 25, 1991. Estimated Expiration Date: 
December 6, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 6, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesRe-tuning device comprising a switching mixer stage and a tuning oscillator High dynamic range mixer Monolithic distributed mixer GaAs MESFET balanced resistive mixer Patent #: 4949398 InventorAssigneeApplicationNo. 281156 filed on 12/06/1988US Classes:455/326, With balanced mixer455/323Particular frequency conversion structure or circuitryExaminersPrimary: Eisenzopf, Reinhard J.Assistant: Sutcliffe, Geoff International ClassH04B 001/16AbstractA wide band RF mixer includes a first bifilar balun transformer coupling a high level source of RF signal to the input winding of a trifilar balun transformer. The two output windings of the trifilar balun transformer are connected in series with the drain-source circuits of a pair of GaAs FET transistors. The source of each FET transistor is connected to ground. A local oscillator has a symmetric output signal that is coupled to a self-bias network and also to the gate electrodes of said FETs. An IF output signal is taken between ground and a common junction of the output balun windings. The arrangement provides a high level mixer with good intermodulation characteristics for ultra high frequencies.Other References
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