U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Fast shutter for protection from electromagnetic radiation

Patent 5022742 Issued on June 11, 1991. Estimated Expiration Date: Icon_subject June 11, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

1632069

3245315

3266370

3271578

3305863

3475609

3656836

3695747

3902061

Diffraction smoothing aperture for an optical beam Patent #: 3980397
Issued on: 09/14/1976
Inventor: Judd ,   et al.

Inventor

Application

No. 538617 filed on 10/03/1983

US Classes:

359/245, Electro-optic359/322Electro-optic crystal material

Examiners

Primary: LaRoche, Eugene R.

Attorney, Agent or Firm

Foreign Patent References

  • 73748 JP 06/24/1977
  • 11246 JP 01/24/1980
  • 2089173 GB 06/24/1982

International Class

G02F 001/01

Abstract

A solid state shutter for blocking EMP is disclosed. The shutter includes thin films of amorphous semiconductor material fro the Group V or VI elements deposited on a silicon dioxide substrate. An antenna senses incident EMP causing a trigger circuit to apply a voltage across the thin films. The thin films switch from a state of high resistance to a state of low resistance for blocking passage of the EMP.

Other References

  • Smith et al, "Aspects of Threshold Switching", Electrocomponent Science & chnology, 12-1974, pp. 137-139
  • Chang et al, "Amorphous Semiconductor Light Modulator" IBM Tech. Disc. Bull., 5-1970, pp. 2236
  • Kienzle et al, "Optical Properties of Tl2 SeAs2 Te3 Amorphous Chalcogenide Glass in the Range 2 to 10.6 μm," JOSA vol. 6, 1978, pp. 1396
  • Kolomiets et al, "Changes in the Optical Properties of Amorphous (As2 Se3)1-x (As2 Te3)x Films under the Action of Electric Fields & Optical Excitation", Sov. Phys. Semicond. 8-1978, pp. 938-94
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