Semiconductor integrated amplifier
High-speed logic circuit with a constant current source arrangement
High-gain semiconductor device with capacitive coupling
Input buffer circuit and logic circuit using the buffer circuit
Thyristor having controllable emitter-base shorts Patent #: 4760432
ApplicationNo. 367046 filed on 06/16/1989
US Classes:257/532, Including capacitor component257/577, Including additional component in same, non-isolated structure (e.g., transistor with diode, transistor with resistor, etc.)257/659, WITH SHIELDING (E.G., ELECTRICAL OR MAGNETIC SHIELDING, OR FROM ELECTROMAGNETIC RADIATION OR CHARGED PARTICLES)257/E27.019, Bipolar transistor in combination with diode, capacitor, or resistor (EPO)326/126, Emitter-coupled or emitter-follower logic327/187External effect device (e.g., light, heat, magnetic, or mechanical force sensitive devices, etc.)
ExaminersPrimary: James, Andrew J.
Assistant: Deal, Cynthia S.
Attorney, Agent or Firm
Foreign Patent References
International ClassesH01L 027/02
Foreign Application Priority Data1988-06-24 JP
AbstractA MIS capacitor to be implemented in a semiconductor device employing various or predetermined circuits, has a dielectric side electrode which is in contact with a buried layer provided on a semiconductor substrate through a dielectric film and a buried layer-side electrode connected to the buried layer. The buried layer-side electrode of the MIS capacitor is connected to a low-impedance side of the circuit employed therewith. This structure, when connected as such, is capable of reducing the influence of noise attributed to an -ray and thereby operating the circuit stably. The semiconductor device using a MIS capacitor invention is adaptable to an emitter follower circuit and various logic circuits for preventing malfunction resulting from -ray radiation.