Semiconductor device using MIS capacitor
Patent 5018000 Issued on May 21, 1991. Estimated Expiration Date: 
June 16, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 16, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3539880 Semiconductor integrated amplifier High-speed logic circuit with a constant current source arrangement High-gain semiconductor device with capacitive coupling Input buffer circuit and logic circuit using the buffer circuit Thyristor having controllable emitter-base shorts Patent #: 4760432 InventorsAssigneeApplicationNo. 367046 filed on 06/16/1989US Classes:257/532, Including capacitor component257/577, Including additional component in same, non-isolated structure (e.g., transistor with diode, transistor with resistor, etc.)257/659, WITH SHIELDING (E.G., ELECTRICAL OR MAGNETIC SHIELDING, OR FROM ELECTROMAGNETIC RADIATION OR CHARGED PARTICLES)257/E27.019, Bipolar transistor in combination with diode, capacitor, or resistor (EPO)326/126, Emitter-coupled or emitter-follower logic327/187External effect device (e.g., light, heat, magnetic, or mechanical force sensitive devices, etc.)ExaminersPrimary: James, Andrew J.Assistant: Deal, Cynthia S. Attorney, Agent or FirmForeign Patent References
International ClassesH01L 027/02H01L 029/92 H01L 029/68 H01L 029/78 Foreign Application Priority Data1988-06-24 JPAbstractA MIS capacitor to be implemented in a semiconductor device employing various or predetermined circuits, has a dielectric side electrode which is in contact with a buried layer provided on a semiconductor substrate through a dielectric film and a buried layer-side electrode connected to the buried layer. The buried layer-side electrode of the MIS capacitor is connected to a low-impedance side of the circuit employed therewith. This structure, when connected as such, is capable of reducing the influence of noise attributed to an -ray and thereby operating the circuit stably. The semiconductor device using a MIS capacitor invention is adaptable to an emitter follower circuit and various logic circuits for preventing malfunction resulting from -ray radiation. | |
