Magnetoresistive memory including thin film storage cells having tapered ends
Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
Differential magnetoresistive memory sensing
Magnetic device integrated circuit interconnection system Patent #: 4918655
ApplicationNo. 504777 filed on 04/04/1990
US Classes:365/173, Multiple magnetic storage layers365/158Magnetoresistive
ExaminersPrimary: Popek, Joseph A.
Attorney, Agent or Firm
International ClassG11C 011/15
AbstractA method for sensing magnetic states of magnetic bit structures formed of separated double layer, magnetoresistive, ferromagnetic memory films through providing a word line current in a direction which results in a magnetic field due thereto, in the memory films of these bit structures, that is oriented in a direction opposite a common direction followed at least partially by orientations of edge magnetizations in these films that are parallel to the edges thereof, and sensing a change in electrical resistance of these bit structures as a result of that current.