Opposed field magnetoresistive memory sensing
Patent 5012444 Issued on April 30, 1991. Estimated Expiration Date: 
April 4, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 4, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMagnetoresistive memory including thin film storage cells having tapered ends Magnetoresistive memory with multi-layer storage cells having layers of limited thickness Differential magnetoresistive memory sensing Magnetic device integrated circuit interconnection system Patent #: 4918655 InventorsAssigneeApplicationNo. 504777 filed on 04/04/1990US Classes:365/173, Multiple magnetic storage layers365/158MagnetoresistiveExaminersPrimary: Popek, Joseph A.Attorney, Agent or FirmInternational ClassG11C 011/15AbstractA method for sensing magnetic states of magnetic bit structures formed of separated double layer, magnetoresistive, ferromagnetic memory films through providing a word line current in a direction which results in a magnetic field due thereto, in the memory films of these bit structures, that is oriented in a direction opposite a common direction followed at least partially by orientations of edge magnetizations in these films that are parallel to the edges thereof, and sensing a change in electrical resistance of these bit structures as a result of that current. | |
