Production of diamond compacts consisting essentially of diamond crystals bonded by silicon carbide
November 15, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3574580 Polycrystalline diamond body Compact-grained diamond material Silicon carbide and silicon bonded polycrystalline diamond body and method of making it Process for preparing a polycrystalline diamond body Process for preparing a silicon-bonded polycrystalline diamond body Polycrystalline diamond body and process Polycrystalline diamond body/silicon carbide substrate composite Method of making diamond compacts for rock drilling Diamond compacts and process for making same Patent #: 4874398 InventorAssigneeApplicationNo. 283362 filed on 11/15/1988US Classes:501/90, And carbonaceous material51/307, WITH INORGANIC MATERIAL423/345, Of carbon (i.e., silicon carbide)423/439, Binary compound (e.g., carbide, etc.)423/446, Diamond501/86, Synthetic precious stones (e.g., single crystals, etc.)501/88Silicon carbideExaminersPrimary: Bell, Mark L.Assistant: Green, Anthony Attorney, Agent or FirmForeign Patent References
International ClassesC04B 035/56C04B 035/58 B24D 003/00 Foreign Application Priority Data1987-03-23 AUAbstractA process for producing a diamond compact comprised of diamond crystals bonded mainly by silicon carbide. The diamond crystals are intimately mixed with silicon in the proportions 97 to 65 percent by weight of diamond to 3 to 35 percent by weight of silicon. The thus-mixed diamond crystals and silicon are placed immediately adjacent to one or more bodies of silicon within a container and subjected to high pressure and temperature so as to cause melting of the premixed silicon and of the external silicon which infiltrates into the interstitial spaces between the diamond crystals to cause most of the silicon between the diamond crystals to react with diamond to produce silicon carbide. The elevated temperature is in the range 1,100° to 18,000° C., and the elevated pressure is in the range 10 to 40 kilobars. The resulting compact contains between 50 and 85 volume percent of diamond with a density of at least 3.35 g/cm3 and a compressive strength of at least 10 kilobars. |
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