Apparatus for producing semiconductor devices
Patent 5006192 Issued on April 9, 1991. Estimated Expiration Date: 
November 21, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
November 21, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of attacking a thin film by decomposition of a gas in a plasma Dry etching device comprising an electrode for controlling etch rate Plasma reactor apparatus and method Plasma reactor sidewall shield Variable duty cycle, multiple frequency, plasma reactor Plasma treatment apparatus Fixture for cleaning a plasma etcher Patent #: 4786392 InventorAssigneeApplicationNo. 273556 filed on 11/21/1988US Classes:156/345.44, Electrically coupled to a power supply or matching circuit118/715, GAS OR VAPOR DEPOSITION118/723E, Having glow discharge electrodes (e.g., DC, AC, RF, etc.)134/1, Including application of electrical radiant or wave energy to work156/345.45, Including more than two electrodes (e.g., triode reactors)204/298.06, Triode, tetrode, auxiliary electrode or biased workpiece204/298.34, Auxiliary electrode, bias means or specified power supply438/905CLEANING OF REACTION CHAMBERExaminersPrimary: Schor, Kenneth M.Assistant: Burns, Todd J. Attorney, Agent or FirmForeign Patent References
International ClassesH01L 021/304C23C 014/00 Foreign Application Priority Data1988-06-28 JPAbstractAn apparatus for treating wafers utilizing the plasma produced by a gas discharge and a method of cleaning such apparatus are disclosed. The apparatus is equipped with a device for forming a high voltage electric field in a space outside of the discharge space in which the wafer treating plasma is generated. The cleaning of the inner surfaces of the vacuum vessel of the apparatus is effected during the periods between the treatments by means of the plasma generated by the gas discharge started and sustained by the electric field device as well as by a main electrode for maintaining the treating discharge. The device for forming a high voltage electric field as mentioned above may comprise a limiter electrode surrounding the treating discharge space; alternatively, it may comprise an auxiliary electrode disposed in the space outside the treating discharge space. First, an etching gas capable of etching the films deposited on the inner surfaces of the vessel of the apparatus is introduced into the vessel as the discharge gas in the cleaning process; next, hydrogen is introduced into the vessel to remove the impurities adsorbed on the surfaces of the vessel. The etching gas may comprise hydrogen or argon.Other References
Field of SearchAuxiliary electrode, bias means or specified power supplyTriode, tetrode, auxiliary electrode or biased workpiece Control of deposition of coating material or selective area, e.g., pattern or edge effect Plural electrodes selectively energized With means to apply electrical and/or radiant energy to work and/or coating material GAS OR VAPOR DEPOSITION Including application of electrical radiant or wave energy to work |
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