Chemical vapor deposition reactor and method of operation
Patent 4993358 Issued on February 19, 1991. Estimated Expiration Date: 
July 28, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 28, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3093507 3633537 3696779 3750620 3757733 3783822 3922467 Method for producing compound thin films Method of coating semiconductor substrates Thin film deposition apparatus using an RF glow discharge InventorApplicationNo. 386903 filed on 07/28/1989US Classes:118/715, GAS OR VAPOR DEPOSITION427/248.1COATING BY VAPOR, GAS, OR SMOKEExaminersPrimary: Morgenstern, NormanAssistant: Owens, Terry J. Attorney, Agent or FirmForeign Patent References
International ClassC23C 016/00AbstractA chemical vapor deposition (CVD) reactor and method are disclosed wherein a chamber, preferably configured for receiving a single wafer as a deposition substrate, has multiple gas inlet orifices and exhaust ports which are independently adjustable for dynamically varying and controlling directionality of local gas flow vectors toward and past the deposition substrate. The injection angle of reactant gas being introduced into the chamber is adjusted by baffles for statically deflecting gas flow entering the chamber. Adjustment of the gas inlet orifices and/or exhaust ports and adjustment of the injection angle for the reactant gas is selected for achieving enhanced coating uniformity, and conformality of deposition if necessary or desired, on the substrate. | |
