Vapor deposition process for depositing an organo-metallic compound layer on a substrate
November 2, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3291657 3705059 3754975 3802967 Process for depositing a III-V semi-conductor layer on a substrate Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material Thin films of compounds and alloy compounds of Group III and Group V elements Method of forming thin vapor deposited film of organic material Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes Pulsed laser microfabrication InventorsApplicationNo. 430397 filed on 11/02/1989US Classes:438/483, Compound semiconductor117/104, Using an organic precursor (e.g., propane, metal-organic, MOCVD, MOVPE)427/226, HEAT DECOMPOSITION OF APPLIED COATING OR BASE MATERIAL427/255.11, Base includes an inorganic compound containing silicon or metal (e.g., glass, ceramic, brick, etc.)427/592, Resistance heating438/488, Polycrystalline semiconductor438/933GERMANIUM OR SILICON OR GE-SI ON III-VExaminersPrimary: Morgenstern, NormanAssistant: Bucker, Margaret Attorney, Agent or FirmForeign Patent References
International ClassesC23C 016/19C23C 016/22 C23C 016/46 AbstractThe invention comprises applying to a substrate a precursor of an organo-metallic compound, the precursor preferably consists of one or more pairs of ligand substituted Group III and V elements. The precursor is decomposed and deposits onto a receiving layer held at the decomposing temperature of the vaporized material.Other References
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