Method of forming transparent conductive film and apparatus for forming the same
Patent 4975168 Issued on December 4, 1990. Estimated Expiration Date: 
April 17, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 17, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod and apparatus for monitoring and controlling sputter deposition processes Method of and apparatus for control of reactive sputtering deposition Apparatus for monitoring and/or controlling plasma processes Rapid rate reactive sputtering of a group IVb metal Patent #: 4428811 InventorsAssigneeApplicationNo. 339474 filed on 04/17/1989US Classes:204/192.13, Measuring or testing (e.g., of operating parameters, property of article, etc.)204/192.29, Transparent conductor204/298.03, Measuring, analyzing or testing204/298.07, Specified gas feed or withdrawal204/298.25Multi-chamber (e.g., including air lock, load/unload chamber, etc.)ExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmInternational ClassesC23C 014/54C23C 014/56 Foreign Application Priority Data1988-04-20 JPAbstractA method of forming a transparent conductive thin film by sputtering includes the step of placing a target consisting of a conductive oxide material and a substrate on which the thin film is to be formed in a pressure vessel, the step of supplying argon gas and oxygen gas after the pressure vessel is substantially evacuated, the step of supplying a sputtering current to the target to maintain a discharge state, the step of detecting the partial pressure of oxygen in the gas mixture in the pressure chamber, and the step of controlling the flow rate of oxygen gas. The flow rate of the oxygen gas is controlled by a control unit such that the value of the partial pressure of oxygen which is detected in the partial pressure detection step is always kept constant.Other References
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