U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Photoelectric conversion apparatus with shielded cell

Patent 4972243 Issued on November 20, 1990. Estimated Expiration Date: Icon_subject March 20, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3560755

3624428

3626825

3753247

Semiconductor image sensor
Patent #: 3946151
Issued on: 03/23/1976
Inventor: Kamiyama ,   et al.

Light shield for a semiconductor device comprising blackened photoresist
Patent #: 3969751
Issued on: 07/13/1976
Inventor: Drukaroff ,   et al.

Photo-sensor device and image scanning system employing the same
Patent #: 4293877
Issued on: 10/06/1981
Inventor: Tsunekawa ,   et al.

Solid-state imaging apparatus
Patent #: 4300163
Issued on: 11/10/1981
Inventor: Wada ,   et al.

Image pickup device
Patent #: 4455574
Issued on: 06/19/1984
Inventor: Hashimoto ,   et al.

Solid-state image sensor with exposure controller
Patent #: 4471228
Issued on: 09/11/1984
Inventor: Nishizawa ,   et al.

More ...

Inventors

Assignee

Application

No. 325023 filed on 03/20/1989

US Classes:

257/435, With optical shield or mask means250/204, Adjusting optical system to balance brightness in plural paths250/214.1, Special photocell250/578.1, Plural light sources or optical paths257/290, Light responsive or combined with light responsive device257/462, Phototransistor257/E27.149, Bipolar transistor imager (EPO)330/59, HAVING LIGHT-CONTROLLED OR ACTIVATED DEVICE (I.E., NOT LIGHT SIGNAL)330/69, SUM AND DIFFERENCE AMPLIFIERS348/230.1, Readout of solid-state image sensor considered or altered348/297Accumulation or integration time responsive to light or signal intensity

Examiners

Primary: Mintel, William

Attorney, Agent or Firm

Foreign Patent References

  • 0132076 EP. 01/23/1985
  • 0200532 EP 11/23/1986
  • 0201270 EP 11/23/1986
  • 0226338 EP. 06/23/1987
  • 57-75469 JP 05/23/1982
  • 59-195861 JP 11/23/1984
  • 252653 JP. 02/23/1985
  • 60-120556 JP 06/23/1985
  • 62-113468 JP. 05/23/1987
  • 1169663 GB. 11/23/1969

International Class

H01L 027/14

Foreign Application Priority Data

1986-09-19 JP

Abstract

A photoelectric conversion apparatus has a plurality of photoelectric conversion cells. Each cell includes a semiconductor transistor having a control electrode area which in turn includes a plurality of main electrode areas for reading signals. The potential of the control electrode area is controlled to store carriers produced by optical pumping in the control electrode area, to read, from the main electrode area, a signal controlled by the storage voltage produced due to the storage, and to perform a refreshing operation to nullify the carriers stored in the control electrode area. A device is provided for performing a peak detection on the basis of signals from the main electrode area. At least one of the photoelectric conversion cells is shielded from light. The peak detection device performs the peak detection by detecting the difference between a peak signal obtained on the basis of a signal from the photoelectric conversion cells and a dark signal from the photoelectric conversion cells shielded from light.

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