Semiconductor devices and method for making the same
Patent 4969031 Issued on November 6, 1990. Estimated Expiration Date: 
November 6, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
November 6, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3566215 3874936 Silicon on sapphire oriented for maximum mobility Patent #: 3969753 InventorsAssigneeApplicationNo. 463608 filed on 02/03/1983US Classes:257/64, Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation)257/E21.318, Of silicon body, e.g., for gettering (EPO)257/E21.324, Thermal treatment for modifying the properties of semiconductor body, e.g., annealing, sintering (EPO)257/E21.347, Using electromagnetic radiation, e.g., laser radiation (EPO)257/E29.004, With specified crystalline planes or axis (EPO)257/E29.056, With variation of composition of channel (EPO)257/E29.086, Further characterized by doping material (EPO)257/E29.107, Imperfections within semiconductor body (EPO)257/E29.287SOS transistor (EPO)ExaminersPrimary: James, Andrew J.Assistant: Prenty, Mark V. Attorney, Agent or FirmInternational ClassH01L 029/78Foreign Application Priority Data1982-02-03 JPAbstractA semiconductor device has an active layer in which a semiconductor element is formed by employing a silicon single crystal as a substrate. The present invention causes a tensile strain to remain in the active layer, thereby to improve the carrier mobility.Other References
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