U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Etching apparatus

Patent 4968375 Issued on November 6, 1990. Estimated Expiration Date: Icon_subject November 8, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Apparatus for etching of oxide film on semiconductor wafer
Patent #: 4339297
Issued on: 07/13/1982
Inventor: Aigo

Method for etching semiconductor wafers on one side Patent #: 4350562
Issued on: 09/21/1982
Inventor: Bonu

Inventors

Assignee

Application

No. 433165 filed on 11/08/1989

US Classes:

156/345.23, With specified workpiece support134/32, With work or work parts movable during treatment134/198, With spray or jet supplying and/or applying means438/748Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant

Examiners

Primary: Powell, William A.

Attorney, Agent or Firm

International Classes

H01L 021/306
B44C 001/22
C03C 015/00
C03C 025/06

Foreign Application Priority Data

1988-11-11 JP

Abstract

A semiconductor substrate etching apparatus is disclosed. In this apparatus, a semiconductor substrate is mounted on the upper surface of a first vacuum chuck, an etching solution is supplied to a groove of a roller of a semiconductor substrate end surface etching mechanism, which covers the end surface of the semiconductor substrate, and the first vacuum chuck and the roller are rotated in the opposite directions. The end surface of the semiconductor substrate is brought into contact with the etching solution. The etching solution is then transferred onto the end surface of the substrate, thus performing etching of the end surface.

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