Method and apparatus for sputter coating stepped wafers
April 17, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3669871 3878085 3884793 Planar magnetron sputtering method and apparatus Glow discharge method and apparatus Target profile for sputtering apparatus Sputtering process and apparatus Deposition rate regulation by computer control of sputtering systems Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure Sputter system incorporating an improved blocking shield for contouring the thickness of sputter coated layers InventorsAssigneeApplicationNo. 339308 filed on 04/17/1989US Classes:204/192.12, Glow discharge sputter deposition (e.g., cathode sputtering, etc.)204/192.13, Measuring or testing (e.g., of operating parameters, property of article, etc.)204/298.03, Measuring, analyzing or testing204/298.08, Specified power supply or matching network204/298.12, Specified target particulars204/298.16, Magnetically enhanced204/298.17, Flux passes through target surface204/298.18, Focusing target (e.g., conical target, plural inclined targets, etc.)204/298.19Planar magnetronExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmForeign Patent References
International ClassC23C 014/35AbstractA magnetron sputtering method and apparatus employing a one-piece annular target having a concave continuously smooth surface with an inwardly facing portion close to and surrounding the outer edge of a stepped wafer provides a sputtering surface with areas facing the differently facing surfaces of the wafer steps. Two concentric erosion zones on the target surface are independently energized at different electrical parameter values by synchronizing the power applied to the single target with switched activation of plasmas overlying the respective target regions which define the erosion zones. The electrical parameters and the geometry are established so as to uniformly coat the differently facing surfaces of the stepped wafer. During part of the duty cycle during which each target region is energized, parameters may be measured. Such parameters may be those which vary with changes in geometry as for example may be due to target erosion. The operation of different target regions, such as the duty cycles or power levels for such regions, may be separately varied in response to the measurements or otherwise, to maintain uniform substrate coating as the target erodes. The target is thicker under the outer region and has an annular pole piece embedded to reduce the space separating the target erosion regions, and includes means to cool the target and reinforce it against thermal expansion.Other References
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