U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Diamond compacts and process for making same

Patent 4948388 Issued on August 14, 1990. Estimated Expiration Date: Icon_subject September 27, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3574580

Polycrystalline diamond body
Patent #: 4124401
Issued on: 11/07/1978
Inventor: Lee ,   et al.

Compact-grained diamond material
Patent #: 4142869
Issued on: 03/06/1979
Inventor: Vereschagin ,   et al.

Silicon carbide and silicon bonded polycrystalline diamond body and method of making it
Patent #: 4151686
Issued on: 05/01/1979
Inventor: Lee ,   et al.

Process for preparing a polycrystalline diamond body
Patent #: 4167399
Issued on: 09/11/1979
Inventor: Lee ,   et al.

Process for preparing a silicon-bonded polycrystalline diamond body
Patent #: 4168957
Issued on: 09/25/1979
Inventor: Lee ,   et al.

Polycrystalline diamond body and process
Patent #: 4231195
Issued on: 11/04/1980
Inventor: DeVries ,   et al.

Polycrystalline diamond body/silicon carbide substrate composite
Patent #: 4241135
Issued on: 12/23/1980
Inventor: Lee ,   et al.

Method of making diamond compacts for rock drilling Patent #: 4259090
Issued on: 03/31/1981
Inventor: Bovenkerk

Inventor

Assignee

Application

No. 250259 filed on 09/27/1988

US Classes:

51/308, Clay, silica, or silicate51/309Metal or metal oxide

Examiners

Primary: Lieberman, Paul
Assistant: Thompson, Willie J.

Attorney, Agent or Firm

International Class

B24D 003/02

Foreign Application Priority Data

1984-08-24 AU

Abstract

A diamond compact comprised of 60-95 volume percent of diamond crystals which have been plastically deformed so that they form a rigid framework structure in which contacts between the diamond crystals occur over surfaces arising from plastic deformation of the diamond crystals during formation of the compact under pressure and temperature conditions within the graphite stability field. The diamond framework structure is bonded together by interstitial refractory carbide phases or metallic phases comprised of metals not forming carbides in the presence of carbon. The phases have a melting point greater than 1600° C. The compact comprises less than about 2 percent volume of graphite and possesses a compressive strength greater than 10 kbars.

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