U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Semiconductor memory device

Patent 4942556 Issued on July 17, 1990. Estimated Expiration Date: Icon_subject July 10, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Paired least recently used block replacement system
Patent #: 4168541
Issued on: 09/18/1979
Inventor: DeKarske

Address mapping for memory
Patent #: 4310901
Issued on: 01/12/1982
Inventor: Harding ,   et al.

Block associative memory
Patent #: 4622653
Issued on: 11/11/1986
Inventor: McElroy

Simplified cache with automatic update
Patent #: 4685082
Issued on: 08/04/1987
Inventor: Cheung ,   et al.

Quasi content addressable memory Patent #: 4758982
Issued on: 07/19/1988
Inventor: Price

Inventors

Assignee

Application

No. 377181 filed on 07/10/1989

US Classes:

365/200, Bad bit365/49, ASSOCIATIVE MEMORIES365/168, Ternary365/185.2, Reference signal (e.g., dummy cell)365/207Differential sensing

Examiners

Primary: Fears, Terrell W.

Attorney, Agent or Firm

International Class

G11C 013/00

Foreign Application Priority Data

1986-04-23 JP

Abstract

In a defect relieving technology which replaces defective memory cells of a semiconductor memory device by spare memory cells, use is made of an associative memory. Address information of a defective memory cell is stored as a reference data of the associative memory, and new address information of a spare memory cell is written down as output data of the associative memory. A variety of improvements are made to the associative memory. For instance, a plurality of coincidence detection signal lines of the associative memory are divided into at least two groups, and one group among them is selected by switching means. Reference data of the associative memory comprises three values consisting of binary information of "0" and "1", and don't care value "X". The associative memory further includes a plurality of electrically programable non-volatile semiconductor memory elements.

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