Making an amorphous layer

Patent 4942057 Issued on July 17, 1990. Estimated Expiration Date:

August 14, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

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Inventors

Assignee

Dornier System GmbH

Application

No. 085854 filed on 08/14/1987

US Classes:

427/578, Silicon containing coating material118/723R, By creating electric field (e.g., gas activation, plasma, etc.)118/726, Crucible or evaporator structure136/258, Polycrystalline or amorphous semiconductor257/E21.101, Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (EPO)427/8, MEASURING, TESTING, OR INDICATING427/569, Plasma (e.g., corona, glow discharge, cold plasma, etc.)427/576, Metal, metal alloy, or metal oxide coating427/579, Silicon oxides or nitrides427/580, Electrical discharge (e.g., arcs, sparks, etc.)427/582, Photoinitiated chemical vapor deposition (i.e., photo CVD)427/583, Silicon containing coating427/584Metal, metal alloy, or metal oxide coating

Examiners

Primary: Morgenstern, Norman
Assistant: Padgett, Marianne

Attorney, Agent or Firm

Siegemund; Ralf H.

International Classes

B05D 003/06
C23C 016/00

Foreign Application Priority Data

1986-08-21 DE

Abstract

Amorphous layers are made by decomposing one or several gaseous compounds which include an element or elements to be deposited. These are group 3 and 5 or group 4 elements but amorphous layers of other metals can also be made. The compound is added in a small concentration to a hot gas, preferably hydrogen, helium or argon and a diffusor accelerates the mixture while molecular clusters of the element or elements are formed and impinge upon a target for depositing thereon.