U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Semiconductor substrate heater and reactor process and apparatus

Patent 4938815 Issued on July 3, 1990. Estimated Expiration Date: Icon_subject October 14, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

2897331

3083286

3391270

3505499

3536893

3623712

3673785

3815575

Electrical fluid heater
Patent #: 3983359
Issued on: 09/28/1976
Inventor: Walker ,   et al.

Epitaxial radiation heated reactor
Patent #: 4047496
Issued on: 09/13/1977
Inventor: McNeilly ,   et al.

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Inventor

Application

No. 257854 filed on 10/14/1988

US Classes:

118/726, Crucible or evaporator structure117/101, Characterized by specified crystallography or arrangement of substrate (e.g., wafer cassette, Miller index)118/500, WORK HOLDERS, OR HANDLING DEVICES118/725, Substrate heater118/728, Work support219/385, Combined with container, enclosure, or support for material to be heated219/399, With heat energy transfer, distribution, or accumulator means219/430, With heat storage or transfer means219/439, With heat storage or transfer means219/444.1, Material is an electronic semiconductor device219/449.1, Heating by convection219/521, Including or comprising holding or support means for material to be heated219/530, With heat storage or transfer means (vanes)219/540, With heat storage or transfer means (e.g., fins or plate)257/E21.252By dry-etching (EPO)

Examiners

Primary: Pal, Asok

Attorney, Agent or Firm

Foreign Patent References

  • 0016579A1 EP. 10/13/1980
  • 0082092 EP 06/13/1983
  • 2258074A1 FR. 01/13/1975
  • 2109996 GB. 06/13/1983
  • 121603A2 GB. 12/13/1983
  • 158289A2 GB. 11/13/1985

International Classes

C30B 023/02
C30B 025/10

Abstract

A semiconductor substrate heater process and apparatus are disclosed for uniformly heating semiconductor substrates. A device for supporting the back side of an IC wafer in a reaction chamber and for conduction heating therein and auxiliary heat directed to the front side of the substrate by reflection from the inside surface of the reaction chamber and/or by an auxiliary heating source within the reaction chamber are disclosed.

Other References

  • Soviet Inventions Illustrated, Section E1: Electrical Week 8627, Aug. 13, 1985, p. 20
  • Soviet Inventions Illustrated, Section Ch: Chemical, Week E06, Mar. 24, 1982, p. 1
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