U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Method and apparatus for measuring registration between layers of a semiconductor wafer

Patent 4938600 Issued on July 3, 1990. Estimated Expiration Date: Icon_subject February 9, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Method and apparatus for exposing multi-level registered patterns interchangeably between stations of a multi-station electron-beam array lithography (EBAL) system
Patent #: 4467211
Issued on: 08/21/1984
Inventor: Smith ,   et al.

Multi-layer circuit board inspection system
Patent #: 4536239
Issued on: 08/20/1985
Inventor: Benson

Method and apparatus for automated reading of vernier patterns Patent #: 4742233
Issued on: 05/03/1988
Inventor: Kuyel

Inventor

Assignee

Application

No. 308253 filed on 02/09/1989

US Classes:

356/401, With registration indicia (e.g., scale)250/491.1, MEANS TO ALIGN OR POSITION AN OBJECT RELATIVE TO A SOURCE OR DETECTOR348/126, Of electronic circuit chip or board356/400With light detector (e.g., photocell)

Examiners

Primary: Evans, F. L.
Assistant: Hantis, Karen Paulette

Attorney, Agent or Firm

International Class

G01B 011/00

Abstract

Method and apparatus for measuring displacement between layers of a semiconductor wafer wherein systematic errors associated with the measurement system are eliminated. An optical system, including a microscope and a camera, records an image of registration patterns on different layers of the wafer. The image is analyzed to measure displacement between the registration patterns. A first measurement is taken, the wafer is rotated by 180° about the measurement axis, and a second measurement is taken. The actual displacement between layers of the semiconductor wafer is calculated from the first and second measurements. Since the measured displacements change sign when the wafer is rotated and the systematic errors remain constant, systematic errors drop out of the calculated values of actual displacement. System errors can also be calculated for subsequent correction of measured values.

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