Solar cell and fabrication method thereof
Patent 4935067 Issued on June 19, 1990. Estimated Expiration Date: 
January 31, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
January 31, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSolar cell with integral reverse voltage protection diode Patent #: 4846896 InventorsApplicationNo. 304029 filed on 01/31/1989US Classes:136/255, Schottky, graded doping, plural junction or special junction geometry136/262, Gallium containing257/E27.123, Energy conversion device (EPO)438/80, Lateral series connected array438/93Compound semiconductorExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmForeign Patent References
International ClassesH01L 031/06H01L 031/18 Foreign Application Priority Data1988-02-10 JPAbstractIn the fabrication processes of a solar cell, a first p-n junction having a function required for supplying electric power to the exterior of the solar cell is formed in the vicinity of the light receiving surface, while a second p-n junction is provided in a position not reached by incident light. The two p-n junctions are interconnected in anti-parallel, so that, when a reverse voltage is applied to the first p-n junction, the second p-n junction is forward biased to have a current flow therein, thereby to prevent the solar cell from breaking down. Since the first and second p-n junctions are integrated with each other, the cost for fabricating the solar cell is decreased and the reliability thereof is increased.Other References
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