U.S. patents available from 1976 to present.
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Enhancement of ultraviolet laser ablation and etching organic solids

Patent 4925523 Issued on May 15, 1990. Estimated Expiration Date: Icon_subject July 17, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3622742

3710798

Laser production of lithographic printing plates
Patent #: 4054094
Issued on: 10/18/1977
Inventor: Caddell ,   et al.

Apparatus for adjusting the focal point of an operating laser beam focused by an objective
Patent #: 4289378
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Laser knife device
Patent #: 4408602
Issued on: 10/11/1983
Inventor: Nakajima

Far UV patterning of resist materials
Patent #: 4414059
Issued on: 11/08/1983
Inventor: Blum ,   et al.

Self developing, photoetching of polyesters by far UV radiation
Patent #: 4417948
Issued on: 11/29/1983
Inventor: Mayne-Banton ,   et al.

Method for depositing a metal layer on polyesters
Patent #: 4440801
Issued on: 04/03/1984
Inventor: Aviram ,   et al.

Photo deposition of metals with far UV radiation
Patent #: 4451503
Issued on: 05/29/1984
Inventor: Blum ,   et al.

Patterning of polyimide films with ultraviolet light
Patent #: 4508749
Issued on: 04/02/1985
Inventor: Brannon ,   et al.

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Inventors

Application

No. 380787 filed on 07/17/1989

US Classes:

216/66, Using ion beam, ultraviolet, or visible light216/62, Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant219/121.69, Methods219/121.76Multiple beams

Examiners

Primary: Powell, William A.

Attorney, Agent or Firm

International Classes

B44C 001/22
B29C 037/00

Abstract

A method and apparatus are described which enhance the ablative effect of a UV laser. The ablative effect of a pulsed UV laser is enhanced using a second, longer wavelength pulsed laser. Each pulse of the first laser is followed by or combined with a pulse from the second laser. The etch depth per pulse is controlled by varying the time between pulses from the first and second lasers. The maximum etch depth per pulse occurs at a time separation which is a function of the substrate being etched. The first laser wavelength is selected to be within the absorption spectrum of the unexcited surface molecules of the substrate, while the wavelength of the second laser is selected to be within the absorption spectrum of the surface molecules excited by the incident radiation of the first laser.

Other References

  • D. L. Klein et al., "Ablative Photocomposition Process for Repair of Line Shorts," IBM Technical Disclosure Bulletin, vol. 26, No. 9 (2/84), p. 4669
  • R. Srinivasan et al., "Mechanism of the Ultraviolet Laser Ablation of Polymethyl Methacrylate at 193 and 248 nm: Laser-Induced Fluorescence Analysis Chemical Analysis, and Doping Studies", J. Opt. Soc. Am.B/vol. 3, No. 5 (5/86), p. 785
  • R. Srinivasan et al., "Ablative Photodecomposition of Polymer Films by Pulsed Far-Ultraviolet (193 nm) Laser Radiation: Dependence of Etch Depth on Experimental Conditions," J. Pol. Science, vol. 22, p. 2601 (1984)
  • B. J. Garrison et al., "Laser Ablation of Organic Polymers: Microscopic Models for Photochemical and Thermal Processes," J. Appl. Phys., 57 (8), p. 2909 (4/15/85)
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