High temperature interconnect system for an integrated circuit
Patent 4920071 Issued on April 24, 1990. Estimated Expiration Date: 
August 18, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
August 18, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode Multilayer metal silicide interconnections for integrated circuits Method for interconnecting metallic layers TiW2 N Fusible links in semiconductor integrated circuits Forming low-resistance contact to silicon Method of forming a titanium disilicide Light emitting diode electrode Titanium coated aluminum leads Method of producing titanium nitride MOS device gate electrode Patent #: 4570328 InventorAssigneeApplicationNo. 086200 filed on 08/18/1987US Classes:438/626, Planarization257/E21.58, Planarizing dielectric (EPO)257/E21.585, Filling of holes, grooves, vias or trenches with conductive material (EPO)257/E21.589, By forming conductive members before deposition of protective insulating material, e.g., pillars, studs (EPO)257/E23.163, Principal metal being refractory metal (EPO)438/627, At least one layer forms a diffusion barrier438/632, Utilizing reflow438/643At least one layer forms a diffusion barrierExaminersPrimary: Chaudhuri, OlikAttorney, Agent or FirmForeign Patent References
International ClassH01L 021/283AbstractA semiconductor integrated circuit device is provided with an electrical interconnect system which is stable at high temperatures. The interconnect system employs refractory metal compounds which are electrically conductive, which form stable couples with silicon and compounds thereof, and which remain stable at temperatures exceeding approximately 500° C.Other References
| |
