Emissivity correction apparatus and method
Patent 4919542 Issued on April 24, 1990. Estimated Expiration Date: 
April 27, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 27, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3433052 3439985 3539807 3611806 3796099 Method and apparatus for the enhanced detection of a component of a material Pyrometer #2 Apparatus for remote measurement of temperatures Patent #: 4708493 InventorsApplicationNo. 186558 filed on 04/27/1988US Classes:374/9, EMISSIVITY DETERMINATION250/338.3, Pyroelectric type250/339.03, Including temperature control means356/43, OPTICAL PYROMETERS359/212, Including reflective type moving element359/235, Continuously rotating apertured element374/126, Having emissivity compensating or specified radiating surface374/128, Having significant signal handling circuitry (e.g., linearizing, emissivity compensation)374/133Ambient temperature compensated (e.g., dummy sensor)ExaminersPrimary: Cuchlinski, William A. Jr.Assistant: Gutierrez, Diego Attorney, Agent or FirmForeign Patent References
International ClassesG01J 005/10G01N 025/00 AbstractRadiation detectors and method measure the emissivity of a remote, heated semiconductor wafer in the presence of ambient radiation. Incident radiation within a selected waveband from a controlled source intermittently radiates the remote wafer, and reflected radiation therefrom is detected in synchronism with the intermittent incident radiation to yield output indications of emissivity of the wafer under varying processing conditions. The temperature of the wafer is monitored by another radiation detector (or detectors) operating substantially within the same selected waveband, and the temperature indications thus derived are corrected in response to the output indications of emissivity to provide indications of the true temperature of the wafer.Other References
Field of SearchIn spaced noncontact relationship to specimenBy thermally emitted radiation Having emissivity compensating or specified radiating surface Having significant frequency limitation or relationship (e.g., peak, ratio) Having significant signal handling circuitry (e.g., linearizing, emissivity compensation) Comparison with radiation reference standard Optical system structure (e.g., lens) Ambient temperature compensated (e.g., dummy sensor) EMISSIVITY DETERMINATION OPTICAL PYROMETERS Plural color responsive Pyroelectric type | |
