Method of forming a diamond film
Patent 4915977 Issued on April 10, 1990. Estimated Expiration Date: 
February 25, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 25, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesFilm deposition Process for producing diamond-like carbon Deposition of diamondlike carbon films Method for forming a hard carbon thin film on article and applications thereof Method for synthesizing diamond by using plasma Patent #: 4767608 InventorsAssigneeApplicationNo. 160261 filed on 02/25/1988US Classes:427/580, Electrical discharge (e.g., arcs, sparks, etc.)204/192.38, Vacuum arc discharge coating423/446DiamondExaminersPrimary: Silverman, Stanley S.Attorney, Agent or FirmForeign Patent References
International ClassB05D 003/06Foreign Application Priority Data1987-02-26 JPAbstractA method of forming a diamond film on a substrate wherein hydrogen, a hydrocarbon series gas, an inert gas, an organic compound series gas or a mixture of such gases is introduced into a vacuum vessel to contact a substrate and carbon is evaporated by are discharge at a carbon cathode while applying a voltage to the substrate to deposit carbon on the substrate thus forming a diamond film on the substrate. A silicon series gas, a germanium series gas or a mixture thereof may be also introduced into the vessel with the foregoing gas or gases. While the carbon is being deposited on the substrate, thermoelectrons may also be supplied onto the substrate, and, further, high frequency discharge may be generated in a space between the substrate and the cathodes. |
| ||||||||||||||
