Apparatus for thermal treatment of a wafer in an evacuated environment
Patent 4909314 Issued on March 20, 1990. Estimated Expiration Date: April 16, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
In a vacuum chamber wafer treating apparatus, a wafer is heated or cooled by introducing a gas at a pressure of approximately 100 to 1000 microns in a region between the wafer and a heating element or heat sink. The gas conducts thermal energy between the wafer and heating element or heat sink.
Other References
Carbone et al., "Ultra--High Vacuum Evaporation/Sputtering Apparatus for Cryogenic Thin Film Technology", in IBM Technical Disclosure Bulletin, vol. 22, No. 2, Jul. 1979
Cuomo, "Heat Transfer Process for High Thermal Input Processes", IBM Technical Disclosure Bulletin, vol. 21, No. 2, Jul. 1978
Gardner et al., "Ion Implant Heat Transfer", IBM Technical Disclosure Bulletin, vol. 21, No. 11, Apr. 1979
Hanley et al., "Water Cooled Targets for Intense Ion Beams", IEEE Transactions on Nuclear Science, Jun. 1967, pp. 933-937
Ryding et al., "High Current Systems", Radiation Effects, 1979
Wada et al., "Substrate Temperature Measurement During Ion Implantation", Japanese Journal of Applied Physics, vol. 14, No. 9, Sep. 1975
Air Products and Chemicals Inc., "Technical Manual for Displex Closed Cycle Refrigeration System" (Feb. 1978, revised Aug. 1979), pp. 3-4 to 3-5 and 3-14
M. H. Perkins & J. Squarzini, Jr., IBM Technical Disclosure Bulletin, (vol. 13, No. 5, Oct. 1970), "Cooling of Chrome Glass Plates Produced by RF Sputter Etch