Apparatus for thermal treatment of a wafer in an evacuated environment
Patent 4909314 Issued on March 20, 1990. Estimated Expiration Date: April 16, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
In a vacuum chamber wafer treating apparatus, a wafer is heated or cooled by introducing a gas at a pressure of approximately 100 to 1000 microns in a region between the wafer and a heating element or heat sink. The gas conducts thermal energy between the wafer and heating element or heat sink.
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