Method of manufacturing a semiconductor device, in which a silicon wafer is provided at its surface with field oxide regions

Patent 4906595 Issued on March 6, 1990. Estimated Expiration Date:

July 21, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

2930722

3380852

3583685

Process for manufacturing a radiation hardened oxide
Patent #: 4139658
Issued on: 02/13/1979
Inventor: Cohen , et al.

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Inventor: Arrasmith , et al.

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Inventor: Patterson

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Inventor: Bean , et al.

Inventors

Application

No. 388294 filed on 07/21/1989

US Classes:

438/439, Recessed oxide by localized oxidation (i.e., LOCOS)257/E21.258, Using masks (EPO)257/E21.285, Of silicon (EPO)257/E21.558, Introducing both types of electrical active impurities in local oxidation region solely for forming channel stoppers, e.g., for isolation of complementary doped regions (EPO)427/255.26, Coating formed by reaction of vaporous or gaseous mixture with a base (i.e., reactive coating of non-metal base)438/773In atmosphere containing water vapor (i.e., wet oxidation)

Examiners

Primary: Hearn, Brian E.
Assistant: Wilczewski, M.

Attorney, Agent or Firm

Miller; Paul R.

Foreign Patent References

0125966 JP 09/13/1979
0062545 JP 04/13/1982
0181540 JP 10/13/1984
0122799 JP 07/13/1985
0016531 JP 01/13/1986
0010018 JP 03/13/1987

International Class

H01L 021/469

Foreign Application Priority Data

1986-12-08 NL

Abstract

A method of manufacturing a semiconductor device, in which a surface (1) of a silicon wafer (2) is locally provided with an oxidation mask (3), whereupon the wafer is subjected to an oxidation treatment by heating it in an oxidizing gas mixture. According to the invention, the wafer is heated during the treatment in the oxidizing gas mixture to a temperature of 950° to 1050° C. Water is then added to the oxidizing gas mixture. The quantity of added water is initially less than 30% by volume and later larger. Thus, in a comparatively short time a comparatively thick layer of oxide can be formed without defects being formed in silicon lying under the oxide.

Other References

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