Remote plasma generation process using a two-stage showerhead
Patent 4904621 Issued on February 27, 1990. Estimated Expiration Date: July 16, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
134/1.2, Semiconductor cleaning118/50.1, With means to apply electrical and/or radiant energy to work and/or coating material118/620, WITH MEANS TO APPLY ELECTRICAL AND/OR RADIANT ENERGY TO WORK AND/OR COATING MATERIAL118/728, Work support257/E21.256, By dry-etching (EPO)427/562, Electric discharge (e.g., corona, glow discharge, etc.)438/719, Silicon438/731Using intervening shield structure
A processing apparatus and method for performing a descum process (i.e. a process for removal of polymers and other organic residues) which uses a remote plasma, supplied through a distributor which includes a two-stage showerhead, to achieve improved results.
Other References
I. Sakai et al., "Sealing Concept of Elastic Metal Gasket `Helico-flex`", 32, Vacuum, 33 (1982)
Hajime Ishimaru et al., "Bakable Aluminum Vacuum Chamber and Bellows with an Aluminum Flange and Metal Seal for Utrahigh Vacuum", 26, IEEE Transactions on Nuclear Science, 4000 (1979)
R. B. Fleming et al., "Development of Bakable Seals for Large Non-Circular Parts on the Tokamak Fusion Test Reactor", 17, Journal of Vacuum Science and Technology, 337 (1980)
M. A. Accomazzo, K. L. Rubow, and B. Y. H. Liu, "Ultrahigh Efficiency Membrane Filters for Semiconductor Process Gases", Solid St. Tech., 27(3) pp. 141-146, (1984)
M. E. Burba et al., "Selective Dry Etching of Tungsten for VLSI Metallization", J. Electrochem. Soc.: Solid State Science and Technology, Oct. 1986, pp. 2113-2118
S. Iwata et al., "A New Tungsten Gate Process for VLSI Applications", IEEE Transactions on Electron Devices, vol. ED-31, No. 9, Sep. 1984 pp. 1174-1179
C-K. Hu et al., "Reactive Ion Etching of CVD and Sputtered Tungsten Films", IBM, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, N.Y., 10598, two pages
IBM, "Anisotropic and Selective Etching of Tungsten Silicide-Tungsten-Tungsten-Silicide Composite Stack", IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug. 1986, pp. 1151
Helicoflex Company, Catalog H. 001, 002, Resilient Metal Seals and Gaskets
P. D. Richard et al., "Remote Plasma Enhanced CVD Deposition of Silicon Nitride and Oxide for Gate Insulators in (In,Ga)As FET Devices", J. Vac. Sci. Technol., A3(3), May/Jun. 1985, pp. 867-872
J. Praraszczak et al., "Methods of Creation and Effect of Microwave Plasmas Upon the Etching of Polymers and Silicon", Microelectronic Engineering, 3 (1985), pp. 397-410
C. Arnone et al., Study of Photo-Induced Thin Film Growth on CdS Substrates, Mat. Res. Soc. Symp. Proc., vol. 29 (1984), pp. 275-281
G. Lucovsky et al., "Deposition of Silicon Dioxide and Silicon Nitride by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technology, A4(3), May/Jun. 1986, pp. 681-688
D. E. Tsu et al., "Silicon Nitride and Silicon Diimide Grown by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technol., A4(3) May/Jun. 1986, pp. 480-485
Advertisement, "Dry Stripper", Samco/Marck, Solid State Technology, 30 (3) Mar. 1987, p. 45
F. Paneth et al., "Paneth's Lead-Mirror Experiment", Ber. Dt. Chem. Ges., B62/335 (1929)
G. Kasper and H. Y. Wen, "A Gas Filtration System for 105 Particles/cm3 ", Aerosol Science and Technology, 5(2), pp. 167-185 (1986)
M. L. Malczewski, J. D. Borkman, and G. T. Vardian, "Measurement of Particulates in Filtered Process Gas Streams", Sol. St. Tech., 29(4), pp. 151-157 (1986)
R. A. Bowling, "An Analysis of Adhesion on Semiconductor Surfaces", Journal of the Electrochemical Society, 132 (9), pp. 2208-2214 (1985)
"Mission Accomplished", NASA Tech Briefs, 117(3) pp. 82-83 (1987)
Hiroyoki Yokoyama, "Photo Induced Surface Morphology Improvement and Preferential Orientation Enhancement in Film Deposition of Evaporated ZnS", Appl. Phys. Lett., 49(20), Nov. 17, 1986, pp. 1354-1356
J. B. Mullin et al., "Ultraviolet Assisted Growth of II-VI Compounds", J. Vac. Sci. Technol. A, vol. 4, No. 3, May/Jun. 1986, pp.700-70
S. Oda et al., "Hydrogen Radical Assisted Chemical Vapor Deposition of ZnSe", Appl. Phys. Lett. 48(1), Jan. 6, 1986, pp. 33-35
R. A. Levy et al., "Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications", J. Electrochem. Soc.: Reviews and News, Feb. 1987, pp. 37C-49C
Hajime Ishimaru et al., "Bakable Aluminum Vacuum Chamber and Bellows with an Aluminum Flange and Metal Seal for Ultra-High Vacuum", J. Vac. Sci. Technol., 15(6) Nov./Dec. 1978, pp. 1853-1854
S. Mehta et al., "Blanket CVD Tungsten Interconnect for VLSI Devices", Jun. 9-10, 1986, V-MIC Conf., pp. 418-435
Carl E. Larson et al., "Chemical Vapor Deposition of Gold", Aug. 11, 1986, IBM Almaden Research Center, San Jose, Calif., 91520, p. 266
Paul A. Robertson et al., "Photo Enhanced Deposition of Silicon Oxide Thin Films Using an Internal Nitrogen Discharge Lamp", Fall 1986, Materials Research Society Symposium, Dec., 1986
K. Tsujimoto et al., "A New Sidewall Protection Technique in Microwave Plasma Etching Using a Chopping Method", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 229-232
Robert R. Krchnavek et al., "Photo Deposition Rates of Metal for Metal Alkyls", J. Vac. Sci. Technol. B5(1), Jan./Feb. 1987, pp. 20-26
J. F. Gibbons et al., "Limited Reaction Processing: Silicon Epitaxy", Appl. Phys. Lett., 47(7), Oct. 1, 1985, pp. 721-723
A. Yamada et al., "Photochemical Vapor Deposition of Single-Crystal Silicon at a Very Low Temperature of 200° C.", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 217-220
D. L. Flamm et al., "Reaction of Fluorine Atoms with SiO2 ", J. Appl. Phys., 50(10), Oct. 1979, pp. 6211-6213
D. L. Flamm et al., "The Reaction of Fluorine Atoms with Silicon", J. Appl. Phys., 52(6), 1981, pp. 3633-3639
G. Smolinski et al., "The Plasma Oxidation of CFx in a Tubular-Alumina Fast-Flow Reactor", J. Appl. Phys., 50(7), Jul. '79, pp. 4982-4987
S. Nishino et al., "SiO2 Deposition by Photo-Initiation", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 209-212
C. J. Mogab, "Plasma Etching of Si and SiO2 --The Effect of Oxygen Additions to CF4 Plasmas", J. Appl. Phys., vol. 49, No. 7, Jul. 1978, pp. 3796-3803
C. J. Howard, J. Phys. Chem. vol. 83, pp. 6 (1979)
H. Schlichting, "Boundary-Layer Theory," 7th Edition, McGraw-Hill, New York, (1979)
S. V. Nguyen, "Plasma Assisted Chemical Vapor Deposited Thin Films for Microelectronics Applications", J. Vac. Sci. Technol., B4(5), Sep./Oct. '86, pp. 1159-116