Process for producing superconducting material

Patent 4892862 Issued on January 9, 1990. Estimated Expiration Date:

April 13, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Method for the manufacture of a superconductor containing an intermetallic compounds
Patent #: 4367102
Issued on: 01/04/1983
Inventor: Wilhelm

Preparation of superconducting oxides and oxide-metal composites Patent #: 4826808
Issued on: 05/02/1989
Inventor: Yurek , et al.

Inventors

Assignee

Hitachi, Ltd.

Application

No. 181097 filed on 04/13/1988

US Classes:

505/473, Vapor deposition204/192.24, Superconductor257/E39.01, Comprising copper oxide (EPO)427/62, Superconductor505/110, Having Tc greater than or equal to 150 K505/475, Sputtering505/725, PROCESS OF MAKING OR TREATING HIGH TC (ABOVE 30 K) SUPERCONDUCTING SHAPED MATERIAL, ARTICLE, OR DEVICE505/730, Vacuum treating or coating505/731Sputter coating

Examiners

Primary: Weisstuch, Aaron

Attorney, Agent or Firm

Antonelli, Terry & Wands

Foreign Patent References

0280812 EP 09/13/1988
56-109824 JP 08/13/1981
WO88/05029 WO 07/13/1988

International Classes

H01L 039/24
C23C 014/34

Foreign Application Priority Data

1987-04-13 JP

Abstract

Oxide materials having the formulae (Lx A1-x)i MOy, (Lx A1-x)i -M1-z Cuz Oy and (Lx A1-x)i MOj-δ Gk, wherein L is Sc, Y, lanthanides, etc.; A is Ba, Sr, Ca, etc.; M is V, Nb, Ta, Ti, Zr or Hf; 0<x<1; 0<z<1; i=1, 3/2 or 2; 0<yࣘ4; G is F, Cl or N; δ is oxygen defect, and having a perovskite-like crystal structure, show superconductivity at a temperature higher than the liquid nitrogen temperature these oxide materials can be produced by a substitution diffusion reaction between a substrate and a film or layer deposited on the substrate.

Other References

D. M. Gruen et al, J. Electrochem. Soc., vol. 134, No. 6, pp. 1588-1589 (Jun. 1987)
Z. Bao et al, Int'l J. Modern Phys. B, vol. 1, No. 2, pp. 535-539 (1987)
C. Chang et al., Appl. Phys Lett., vol. 52, No. 1, pp. 72-74 (Jan. 1988)
Y. Sorimachi et al, Japanese J. Appl. Phys., vol. 26, No. 9, pp. L1451-L1452 (Sep. 1987)
H. Kumakura et al, Japanese J. Appl. Phys., vol. 26, No. 7, pp. L1172-L1173 (Jul. 1987)
H. Shimizu et al, Jap. J. Appl. Phys, vol. 27, No. 3, Mar. 1988, pp. L414-L416
Japanese Journal of Applied Physics, vol. 26, No. 4, part 2, Apr. 1987, pp. L337-L338, Tokyo, JP T. Hasegawa et al, "High Tc Superconductivity of La1-xSrx)2CuO4--Effect of Substitution of Foreing Ions for Cu and La . . . "
Proceedings of the 18th International Conference on Low Temperature Physics, Japanese Journal of Applied Physics, Kyoto, 20th-26th, Aug. 1987, pp. 1141-1142, "Sputter Deposited Films of Perovskite Compound and Nb-Si-O . . . "
Physical Review Letters, vol. 58, No. 24, 15th Jun. 1987, pp. 2579-2581, The American Physical Society, New York, US; S. R. Ovshinsky et al, "Superconductivity at 155K