Integrated device for shielding charge injection into the substrate, in particular in driving circuits for inductive and capacitive loads
Patent 4890149 Issued on December 26, 1989. Estimated Expiration Date: 
September 21, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
September 21, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSemiconductor integrated circuit device High voltage semiconductor devices electrically isolated from an integrated circuit substrate Patent #: 4661838 InventorsAssigneeApplicationNo. 099044 filed on 09/21/1987US Classes:257/547, With structural means to control parasitic transistor action or leakage current257/653, WITH SPECIFIED SHAPE OF PN JUNCTION257/914, POLYSILICON CONTAINING OXYGEN, NITROGEN, OR CARBON (E.G., SIPOS)257/E21.537Making of localized buried regions, e.g., buried collector layer, internal connection, substrate contacts (EPO)ExaminersPrimary: Mintel, WilliamAttorney, Agent or FirmForeign Patent References
International ClassH01L 027/04Foreign Application Priority Data1986-09-25 ITAbstractThis integrated device for shielding injected charges in driving circuits for inductive and/or capacitive loads comprises four integrated structures including a first barrier region with high resistivity which surrounds the buried layer of the epitaxial flyback pocket which may be set at a potential lower than ground on the side of the buried layer which faces the driving circuit pocket; a first charge collecting region provided in the epitaxial flyback pocket; a third low-loss diode structure, formed in an epitaxial pocket which is isolated from the flyback pocket and is arranged between the latter and the driving circuit, and connected so as to clamp the voltage between the epitaxial flyback pocket and the substrate to the diode direct conduction voltage; and, finally, a last barrier structure formed by a charge collecting region connected to the supply voltage.Other References
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