Superconducting device
Patent 4888629 Issued on December 19, 1989. Estimated Expiration Date: 
May 31, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 31, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesCompact MOSFET device with reduced plurality of wire contacts Quasiparticle injection control type superconducting device Patent #: 4589001 InventorsAssigneeApplicationNo. 201332 filed on 05/31/1988US Classes:257/35, Particular barrier material257/36, With additional electrode to control conductive state of Josephson junction257/66, Field effect device in non-single crystal, or recrystallized, Semiconductor material257/E39.016Three or more electrode devices, e.g., transistor-like structures (EPO)ExaminersPrimary: Wojciechowicz, EdwardAttorney, Agent or FirmInternational ClassH01L 039/22Foreign Application Priority Data1984-04-19 JPAbstractSuperconducting electrodes are formed on a semiconductor which serves as a channel. A control electrode is disposed through an insulator film or a p-n junction on the side of the semiconductor which is opposite to the semiconductor side on which the superconducting electrode is formed. A superconducting current which flows between the superconducting electrodes across the semiconductor is controlled by an electric signal which is applied to the control electrode, thereby enhancing the current gain. | |
