Process for making a contact structure including polysilicon and metal alloys
Patent 4888297 Issued on December 19, 1989. Estimated Expiration Date: 
October 20, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
October 20, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3496428 3664896 3667008 3833842 3881242 3900944 3906540 Battery snap terminal Method of producing a doped zone of one conductivity type in a semiconductor body utilizing an ion-implanted polycrystalline dopant source Thermal printing head InventorsApplicationNo. 110996 filed on 10/20/1987US Classes:438/307, Using same conductivity-type dopant257/E21.166, Conductive layer comprising semiconducting material (EPO)257/E23.019, Consisting of layered constructions comprising conductive layers and insulating layers, e.g., planar contacts (EPO)438/298, Doping region beneath recessed oxide (e.g., to form chanstop, etc.)438/545, Forming partially overlapping regions438/586Combined with formation of ohmic contact to semiconductor regionExaminersPrimary: Hearn, Brian E.Assistant: Quach, T. N. Attorney, Agent or FirmForeign Patent References
International ClassesH01L 021/225H01L 021/283 AbstractA multi-layer contact process is described for providing contact to a shallow semiconductor region forming a semiconductor PN junction and with a silicon semiconductor body. The multi-layer structure includes a layer of polycrystalline silicon doped with an impurity of the same conductivity type as that of the semiconductor region. A first layer of a refractory alloy is deposited over the polycrystalline silicon layer to provide electrically stable interface therewith. A second layer of another refractory metal or alloy is deposited over the first refractory metal alloy layer and serves to protect the shallow PN junction against current leakage failure. A third layer of interconnect metal is deposited over the multi-layer contact structure. The resulting structure provides a low resistance ohmic contact to a shallow semiconductor region with improved electrical characteristics.Other References
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