Sintered aluminum nitride semi-conductor device
Electronic device with a protective film
Aluminum nitride substrate Patent #: 4761345
ApplicationNo. 214508 filed on 07/01/1988
US Classes:428/552, Entirely inorganic257/E23.009, Ceramic or glass substrates (EPO)257/E23.106, Laminates or multilayers, e.g., direct bond copper ceramic substrates (EPO)428/620, Semiconductor component428/627, Boride, carbide or nitride component428/671, Cu-base component alternative to Ag-, Au-, or Ni-base component428/675Next to Co-, Cu-, or Ni-base component
ExaminersPrimary: Lechert, Stephen J. Jr.
Attorney, Agent or Firm
Foreign Patent References
International ClassB22F 003/00
Foreign Application Priority Data1987-07-03 JP
AbstractA member for a semiconductor apparatus for carrying or holding a semiconductor device, obtained by joining an aluminum nitride substrate and a radiating substrate, comprises an insulating member formed by an aluminum nitride sintered body to be provided thereon with the semiconductor device, a radiating member to be joined to the insulating member, which radiating member is mainly formed of a copper-tungsten alloy or a copper-molybdenum alloy, a stress relieving member interposed between the insulating member and the radiating member and a silver solder member for joining the insulating member, the stress relieving member and the radiating member with each other. The stress relieving member is prepared by copper or a copper alloy, implementing a soft metal or a soft alloy having high plastic deformability, in order to relax, by its own plastic deformation, thermal stress caused by difference in thermal expansion coefficient between the insulating member and the radiating member in a cooling step upon soldering.