Member for semiconductor apparatus
Patent 4886709 Issued on December 12, 1989. Estimated Expiration Date: 
July 1, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 1, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSintered aluminum nitride semi-conductor device Electronic device with a protective film Aluminum nitride substrate Patent #: 4761345 InventorsAssigneeApplicationNo. 214508 filed on 07/01/1988US Classes:428/552, Entirely inorganic257/E23.009, Ceramic or glass substrates (EPO)257/E23.106, Laminates or multilayers, e.g., direct bond copper ceramic substrates (EPO)428/620, Semiconductor component428/627, Boride, carbide or nitride component428/671, Cu-base component alternative to Ag-, Au-, or Ni-base component428/675Next to Co-, Cu-, or Ni-base componentExaminersPrimary: Lechert, Stephen J. Jr.Attorney, Agent or FirmForeign Patent References
International ClassB22F 003/00Foreign Application Priority Data1987-07-03 JPAbstractA member for a semiconductor apparatus for carrying or holding a semiconductor device, obtained by joining an aluminum nitride substrate and a radiating substrate, comprises an insulating member formed by an aluminum nitride sintered body to be provided thereon with the semiconductor device, a radiating member to be joined to the insulating member, which radiating member is mainly formed of a copper-tungsten alloy or a copper-molybdenum alloy, a stress relieving member interposed between the insulating member and the radiating member and a silver solder member for joining the insulating member, the stress relieving member and the radiating member with each other. The stress relieving member is prepared by copper or a copper alloy, implementing a soft metal or a soft alloy having high plastic deformability, in order to relax, by its own plastic deformation, thermal stress caused by difference in thermal expansion coefficient between the insulating member and the radiating member in a cooling step upon soldering. | |
