U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

In-system programmable logic device

Patent 4879688 Issued on November 7, 1989. Estimated Expiration Date: Icon_subject November 7, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Integrated programmable logic arrangement
Patent #: 4041459
Issued on: 08/09/1977
Inventor: Horninger

Non-volatile, electrically erasable and reprogrammable memory element
Patent #: 4399523
Issued on: 08/16/1983
Inventor: Gerber ,   et al.

Apparatus for signature and/or direct analysis of digital signals used in testing digital electronic circuits
Patent #: 4441074
Issued on: 04/03/1984
Inventor: Bockett-Pugh ,   et al.

User reprogrammable programmed logic array
Patent #: 4490812
Issued on: 12/25/1984
Inventor: Guterman

Programmable logic array device using EPROM technology
Patent #: 4617479
Issued on: 10/14/1986
Inventor: Hartmann ,   et al.

Programmable array logic circuit with testing and verification circuitry
Patent #: 4625311
Issued on: 11/25/1986
Inventor: Fitzpatrick ,   et al.

Programmable logic device Patent #: 4761768
Issued on: 08/02/1988
Inventor: Turner ,   et al.

Inventors

Assignee

Application

No. 862815 filed on 05/13/1986

US Classes:

365/185.22, Verify signal326/38, Having details of setting or programming of interconnections or logic functions326/39, Array (e.g., PLA, PAL, PLD, etc.)326/88, With capacitive or inductive bootstrapping365/185.17, Logic connection (e.g., NAND string)365/185.23, Drive circuitry (e.g., word line driver)365/189.08, Including specified plural element logic arrangement708/230, Multifunctional714/725Programmable logic array (PLA) testing

Examiners

Primary: Popek, Joseph A.

Attorney, Agent or Firm

International Classes

H03K 019/77
G06F 011/26

Abstract

An in-system programmable logic device is disclosed which may be configured or reconfigured while installed in a user's system. The disclosed device employs non-volatile memory cells such as floating gate transistors as the programmable elements, and hence the device retains a particular programmed logic configuration virtually indefinitely during a powered-down state. The device is operable in a normal state and in several utility states for reconfiguring the device. The device state is controlled by an internal state machine which executes several state equations whose variables are the logic levels driving two dedicated pins and the present device state. One device pin receives serial input data which loads a shift register latch. The contents of the latch are employed to select a particular row of the cells to be programmed and the logic level to which the selected cells are to be programmed. The device normal inputs and outputs are isolated from the device during the utility states, so that the user's system does not affect the device operation during the utility states. A voltage multiplier circuit is included to generate the high voltage level necessary to program the floating gate transistors employed as the device memory cells from the device supply voltage, thereby further conserving on the required number of device pins. By programming a particular memory cell, the user may select the state of the device outputs during the utility states as either a present data latched condition or a tri-stated condition.

Other References

  • "A High-Speed ESFI SOS Programmable Logic Array with an MNOS Version", IEEE J. Solid-State Cir., vol. SC-10, No. 5, Oct. 1975, pp. 331-335, by K. Horninger
  • Press Release by Lattice Semiconductor Corporation dated Apr. 23, 1985
  • Data Sheet for 53D1641/63D1641, Monolithic Memories, Inc., Bipolar LSI Databook, Fifth Edition, 1983, pp. 3-37 to 3-35
  • "Shadow Register Architecture Simplifies Digital Diagnostics", J. Birner et al., Systems Design Handbook, Monolothic Memories, Inc., 1983, pp. 2-4 to 2-15
  • Duane H. Oto et al., "High Voltage Regulation and Process Considerations for High Density 5V-Only E2 PROM'S", IEEE Journal of Solid State Circuits, vol. SC-18, No. 5, Oct. 1983
  • Steve Landry, "Application-Specific ICs Relying RAM Implement Almost Any Logic Function," Electronic Design, Oct. 31, 1985, pp. 123-130
  • John F. Dickson, "On Chip High-Voltage Generation in MNOS Integrated Circuits Using an Improved Voltage Multiplier Technique", IEEE Journal of Solid State Circuits, vol. SC-11, No. 3, Jun. 1975, pp. 374-378
  • Carver Mead and Lynn Conway, "Introduction to VLSI Systems," 1980, pp. 82-8
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