Etching method for generating apertured openings or trenches in layers or substrates composed of n-doped silicon
May 13, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3471922 3661741 3801390 3846167 Process for forming apertures in silicon bodies Large value capacitor Anodic etching method for the detection of electrically active defects in silicon Photoelectrochemical etching of n-type silicon Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon Fabrication of cleaved semiconductor lasers Patent #: 4689125 InventorsAssigneeApplicationNo. 193760 filed on 05/13/1988US Classes:438/750, To same side of substrate205/655, With irradiation or illumination257/E21.216Electrolytic etching (EPO)ExaminersPrimary: Valentine, Donald R.Attorney, Agent or FirmForeign Patent References
International ClassC25F 003/12Foreign Application Priority Data1987-05-27 DEAbstractThe present invention provides the production of apertured openings or trenches in layers or substrates composed of n-doped silicon proceeding in an electrolytic way, whereby the silicon is connected as a positively polarized electrode of an electrolysis cell containing an agent that contains hydrofluoric acid. Hole structures having highly variable cross-section can be reproducibly manufactured with the method of the invention and holes can be localized by prescribing nuclei. The invention can be used in the manufacture of trench cells in memory modules, insulating trenches in LSI semiconductor circuits, large-area capacitors (varicaps), and in contacting more deeply disposed layers in disconnectable and voltage-controlled thyristors.Other References
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