U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Diamond compacts and process for making same

Patent 4874398 Issued on October 17, 1989. Estimated Expiration Date: Icon_subject October 17, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3574580

Polycrystalline diamond body
Patent #: 4124401
Issued on: 11/07/1978
Inventor: Lee ,   et al.

Compact-grained diamond material
Patent #: 4142869
Issued on: 03/06/1979
Inventor: Vereschagin ,   et al.

Silicon carbide and silicon bonded polycrystalline diamond body and method of making it
Patent #: 4151686
Issued on: 05/01/1979
Inventor: Lee ,   et al.

Process for preparing a polycrystalline diamond body
Patent #: 4167399
Issued on: 09/11/1979
Inventor: Lee ,   et al.

Process for preparing a silicon-bonded polycrystalline diamond body
Patent #: 4168957
Issued on: 09/25/1979
Inventor: Lee ,   et al.

Polycrystalline diamond body and process
Patent #: 4231195
Issued on: 11/04/1980
Inventor: DeVries ,   et al.

Polycrystalline diamond body/silicon carbide substrate composite
Patent #: 4241135
Issued on: 12/23/1980
Inventor: Lee ,   et al.

Method of making diamond compacts for rock drilling Patent #: 4259090
Issued on: 03/31/1981
Inventor: Bovenkerk

Inventor

Application

No. 882937 filed on 06/19/1986

US Classes:

51/293, MISCELLANEOUS51/307, WITH INORGANIC MATERIAL51/308, Clay, silica, or silicate51/309Metal or metal oxide

Examiners

Primary: Lieberman, Paul
Assistant: Thompson, Willie J.

Attorney, Agent or Firm

International Class

B24D 003/00

Foreign Application Priority Data

1984-08-24 AU

Abstract

A process for producing a diamond compact having a compressive strength of at least 10 kbars, the process being performed in the graphite stability field at a maximum pressure of 40 kbars at a temperature of between 1100° C. and 1600° C. for a time which permits plastic deformation of the diamond crystals giving face-to-face contacts there-between and a substantial or complete degree of chemical equilibration between the bonding agent and the diamond crystals. Bonding agents are selected from elements and alloys which produce a bond with diamond having a melting point above 1600° C. and which inhibit the formation of free graphite in the compact.

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