Patent References 3574580 Polycrystalline diamond body Compact-grained diamond material Silicon carbide and silicon bonded polycrystalline diamond body and method of making it Process for preparing a polycrystalline diamond body Process for preparing a silicon-bonded polycrystalline diamond body Polycrystalline diamond body and process Polycrystalline diamond body/silicon carbide substrate composite Method of making diamond compacts for rock drilling Patent #: 4259090 InventorApplicationNo. 882937 filed on 06/19/1986US Classes:51/293, MISCELLANEOUS51/307, WITH INORGANIC MATERIAL51/308, Clay, silica, or silicate51/309Metal or metal oxideExaminersPrimary: Lieberman, PaulAssistant: Thompson, Willie J. Attorney, Agent or FirmInternational ClassB24D 003/00Foreign Application Priority Data1984-08-24 AUAbstractA process for producing a diamond compact having a compressive strength of at least 10 kbars, the process being performed in the graphite stability field at a maximum pressure of 40 kbars at a temperature of between 1100° C. and 1600° C. for a time which permits plastic deformation of the diamond crystals giving face-to-face contacts there-between and a substantial or complete degree of chemical equilibration between the bonding agent and the diamond crystals. Bonding agents are selected from elements and alloys which produce a bond with diamond having a melting point above 1600° C. and which inhibit the formation of free graphite in the compact. | |