Semiconductor laser with facet protection film of selected reflectivity
Patent 4852112 Issued on July 25, 1989. Estimated Expiration Date: 
March 30, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 30, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesHalf wave protection layers on injection lasers Patent #: 4178564 InventorsApplicationNo. 07/175278 filed on 03/30/1988US Classes:372/49.01Particular coating on facetExaminersPrimary: Davie, James W.Attorney, Agent or FirmInternational ClassesH01S 5/00 (20060101)H01S 5/028 (20060101) Foreign Application Priority Data1987-03-31 JPAbstractA semiconductor laser includes a facet protection film consisting of an Al2 O3 film of optical length λ/4 and a SiO2 film of optical length λ/4 produced on the Al2 O3 film, and the facet reflectivity takes a value with in 21&#b1;3%.Other References
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