Patent ReferencesHigh thermal conductivity aluminum nitride ceramic body High thermal conductivity ceramic body of aluminum nitride High thermal conductivity ceramic body of aluminum nitride Combination of AlN-Y2 O3 heat conductive ceramic substrate and electronic component Fine powder of aluminum nitride, composition and sintered body thereof and processes for their production Ceramic temperature stabilization body, and method of making same Aluminum nitride sintered body Patent #: 4698320 Inventors
ApplicationNo. 07/142818 filed on 01/11/1988US Classes:501/98.4, Aluminum nitride containing (AIN)501/153Aluminum compound containingExaminersPrimary: Dixon, William R. Jr.Assistant: Group, Karl Attorney, Agent or FirmInternational ClassC04B 35/581 (20060101)Foreign Application Priority Data1987-01-13 JPAbstractAccording to the present invention, there is provided an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of a AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen. According to the present invention, there is provided a method of fabricating an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen, wherein a molded body prepared by mixing and molding an aluminum nitride power having less than 7 wt % of oxygen and an average particle size of 0.05 to 5 μm and with rare earth compounds of 0.01 to 15 wt % of based on rare earth elements content, or a sintered AlN body containing oxide grain boundary phases of 0.01 to 15 wt % of rare earth elements and 0.01 to 20 wt % of oxygen and (rare earth element)--Al--O compounds phases and/or (rare earth element)--O compounds phases, is fired in a reducing atmosphere at a temperature of 1,550 to 2,050° C. for 4 hours or more.Other References
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