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AlN sintered body having high thermal conductivity and a method of fabricating the same

Patent 4847221 Issued on July 11, 1989. Estimated Expiration Date: Icon_subject January 11, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

High thermal conductivity aluminum nitride ceramic body
Patent #: 4547471
Issued on: 10/15/1985
Inventor: Huseby ,   et al.

High thermal conductivity ceramic body of aluminum nitride
Patent #: 4578364
Issued on: 03/25/1986
Inventor: Huseby ,   et al.

High thermal conductivity ceramic body of aluminum nitride
Patent #: 4578365
Issued on: 03/25/1986
Inventor: Huseby ,   et al.

Combination of AlN-Y2 O3 heat conductive ceramic substrate and electronic component
Patent #: 4591537
Issued on: 05/27/1986
Inventor: Aldinger ,   et al.

Fine powder of aluminum nitride, composition and sintered body thereof and processes for their production
Patent #: 4618592
Issued on: 10/21/1986
Inventor: Kuramoto ,   et al.

Ceramic temperature stabilization body, and method of making same
Patent #: 4627815
Issued on: 12/09/1986
Inventor: Aldinger ,   et al.

Aluminum nitride sintered body Patent #: 4698320
Issued on: 10/06/1987
Inventor: Kasori ,   et al.

Inventors

Application

No. 07/142818 filed on 01/11/1988

US Classes:

501/98.4, Aluminum nitride containing (AIN)501/153Aluminum compound containing

Examiners

Primary: Dixon, William R. Jr.
Assistant: Group, Karl

Attorney, Agent or Firm

International Class

C04B 35/581 (20060101)

Foreign Application Priority Data

1987-01-13 JP

Abstract

According to the present invention, there is provided an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of a AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen. According to the present invention, there is provided a method of fabricating an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen, wherein a molded body prepared by mixing and molding an aluminum nitride power having less than 7 wt % of oxygen and an average particle size of 0.05 to 5 μm and with rare earth compounds of 0.01 to 15 wt % of based on rare earth elements content, or a sintered AlN body containing oxide grain boundary phases of 0.01 to 15 wt % of rare earth elements and 0.01 to 20 wt % of oxygen and (rare earth element)--Al--O compounds phases and/or (rare earth element)--O compounds phases, is fired in a reducing atmosphere at a temperature of 1,550 to 2,050° C. for 4 hours or more.

Other References

  • Iwase et al, "Developement of High Thermal Conductive AlN Ceramic Substrate Terminology", IMC Procedings, Tokyo, May 21-23, 1984 pp. 180-185
  • Slack, "Nonmetallic Crystals with High Thermal Conductivity", J. Phys. & Chem. Solids, 34, pp. 321-335, 1973
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