Optical information recording medium
Patent 4839208 Issued on June 13, 1989. Estimated Expiration Date: 
April 28, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 28, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesOptically readable information disc provided with a reflective optical structure Process of using radiation-sensitive carrier body to form stamper structure and subsequent use as a stamper to make optical disks Thin film for recording data Information recording medium Patent #: 4670345 InventorsApplicationNo. 07/043626 filed on 04/28/1987US Classes:428/64.5, Tellurium containing346/135.1, Laminated, impregnated, or coated bases347/264, With record receiver or handling means therefor369/288, Specified material428/141, Continuous and nonuniform or irregular surface on layer or component (e.g., roofing, etc.)428/333, In terms of molecular thickness or light wave length428/688, Of inorganic material428/689, Metal-compound-containing layer428/697, Layer contains compound(s) of plural metals428/698, Carbide-, nitride-, or sulfide-containing layer428/699, Next to second metal-compound-containing layer428/704, Of B, N, P, S, or metal-containing material428/913MATERIAL DESIGNED TO BE RESPONSIVE TO TEMPERATURE, LIGHT, MOISTURE, ETC.ExaminersPrimary: Robinson, Ellis P.Assistant: Ryan, J. P. Attorney, Agent or FirmInternational ClassesG11B 7/257 (20060101)G11B 7/24 (20060101) G11B 7/243 (20060101) Foreign Application Priority Data1986-04-30 JPAbstractAn optical information recording medium according to the present invention is featured by its recording layer which contains a compound of tellurium (Te), selenium (Se) and nitrogen (N). The thickness of the recording layer 2 favorably ranges from about 100 angstroms (Å) to about 1000 Å and more favorably from 180 Å to 400 Å. The content of Se in the recording layer 2 favorably lies within a range from 2 to 40 atomic percent, more favorably from 10 to 30 atomic percent. The content of N is favorably to be from 2 to 20 atomic percent, and more favorably from 2 to 10 atomic percent.Field of SearchOf inorganic materialMetal-compound-containing layer Layer contains compound(s) of plural metals Carbide-, nitride-, or sulfide-containing layer Next to second metal-compound-containing layer Of B, N, P, S, or metal-containing material MATERIAL DESIGNED TO BE RESPONSIVE TO TEMPERATURE, LIGHT, MOISTURE, ETC. Physical dimension specified In terms of molecular thickness or light wave length | |
