Patent References 3665945 Method of doping inpurities Method and apparatus for building up and reducing the pressure of gases in ionography imaging chambers Method and apparatus for improving the yield of integrated circuit devices Patent #: 4739787 InventorAssigneeApplicationNo. 07/203009 filed on 06/06/1988US Classes:137/14, Involving pressure control118/50, WITH VACUUM OR FLUID PRESSURE CHAMBER137/486, Responsive to change in rate of fluid flow438/5, INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION438/935GAS FLOW CONTROLExaminersPrimary: Chambers, A. MichaelAssistant: Fox, John C. Attorney, Agent or FirmInternational ClassesC23C 16/52 (20060101)C30B 25/14 (20060101) AbstractControlled, low-turbulence venting of a semiconductor processing vacuum chamber is provided by a venting system including sensing elements for sensing gas conditions, including pressure, in the chamber during venting, and vent rate control elements, including a flow rate regulator valve, responsive to the sensing elements for attaining a venting rate approaching a selected maximal venting rate threshold of sonically choked flow, thereby attaining enhanced non-sonically-choked venting. | |