Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant
September 19, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSurface-treating agent adapted for intermediate products of a semiconductor device Positive developer containing non-ionic surfactants Post-treatment of cured, radiation sensitive, polymerizable resins to eliminate surface tack Aqueous developer solution for positive type photoresists with tetramethyl ammonium hydroxide and trimethyl hydroxyethyl ammonium hydroxide Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution Patent #: 4613561 Inventors
AssigneeApplicationNo. 07/246930 filed on 09/19/1988US Classes:430/331, Finishing or perfecting composition or product430/309, Post imaging process430/323, Including etching substrate430/325Post image treatment to produce elevated patternExaminersPrimary: Michl, Paul R.Assistant: Doody, Patrick A. Attorney, Agent or FirmInternational ClassesG03C 5/18 (20060101)G03F 7/32 (20060101) Foreign Application Priority Data1985-08-06 JPAbstractThe aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metallic ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an acetylene alcohol. In comparison with conventional developing solutions, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer, higher sensitivity and smaller temperature dependency of development and less drawbacks due to foaming of the solution. |
| ||||||||||||||
