U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Process for producing a solid state battery

Patent 4816356 Issued on March 28, 1989. Estimated Expiration Date: Icon_subject November 9, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Solid state battery
Patent #: 4294898
Issued on: 10/13/1981
Inventor: Hartstein

Solid state cell Patent #: 4299890
Issued on: 11/10/1981
Inventor: Rea ,   et al.

Inventor

Application

No. 07/117869 filed on 11/09/1987

US Classes:

429/323, Lithium and halogen containing compound29/623.5, Including coating or impregnating429/231.5Vanadium (V), chromium (Cr), niobium (Nb), molybdenum (Mo), titanium (Ti), or tungsten (W) component is active material

Examiners

Primary: Walton, Donald L.

Attorney, Agent or Firm

International Classes

H01M 4/58 (20060101)
H01M 6/18 (20060101)
H01M 10/36 (20060101)

Abstract

A process for producing a solid state battery successively comprising, superimposed between two metallic contact elements, a layer or thin film of an alkali metal which provides a source of ions, a layer or thin film of ion-superconducting solid electrolyte glass of high ionic conductivity and a layer or thin film of a layered intercalation compound capable of inserting ions issued from the alkali metal film. The lamellae of the thin film or layer of layered compound are oriented substantially perpendicularly parallel to the surface of the solid electrolyte. The process includes forming the layer or thin film of layered intercalation compound by forming a periodic irregularity in only the surface atoms of a substantially smooth substrate surface, and molecular beam depositing the layer or thin film of layered intercalation compound on the substrate surface containing the periodic irregularity of surface atoms. The periodic irregularity of surface atoms conditions the nucleation starting of the layered growth.

Other References

  • Holloway et al., "Oriented Growth of Semiconductors, IV, Vacuum Deposition of Epitaxial Indium Antimonide", Journal of Applied Physics, vol. 37, No. 13, Dec. 1966, pp. 4694-4699
  • Geis et al., "Crystallographic Orientation of Silicon on an Amorphous Substrate Using an Artificial Surface-Relief Grating and Laser Crystallization", Appl. Phys. Lett., 35(1), 1 Jul. 1979, pp. 71-74
  • The Condensed Chemical Dictionary; Hawley, 1981, pp. 621 and 981
  • Handbook of Chemistry and Physics, Weast, 56th Edition, 1975-1976, p. B-108
  • Chabel et al., "Nature on Vicinal Laser-Annealed (Si(111) Surfaces", Physical Review B, vol. 24, No. 6, 15 Sep. 1981, pp. 3303-3309
  • Park et al., "Transitions on Vicinal Surfaces", presented at the International Conference on Solid Films and Surfaces, Hamamatsu, Japan, Aug. 23-37, 1987
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