High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor

Patent 4814851 Issued on March 21, 1989. Estimated Expiration Date:

April 28, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Insulated gate field-effect transistors
Patent #: 4268844
Issued on: 05/19/1981
Inventor: Meiners

Field-effect transistor having a channel region of a Group III-V compound semiconductor and a Group IV semiconductor
Patent #: 4556895
Issued on: 12/03/1985
Inventor: Ohata

Semiconductor device
Patent #: 4566021
Issued on: 01/21/1986
Inventor: Yokoyama

Fabrication of complementary modulation-doped filed effect transistors Patent #: 4603469
Issued on: 08/05/1986
Inventor: Armiento , et al.

Inventors

Assignee

Honeywell Inc.

Application

No. 07/188069 filed on 04/28/1988

US Classes:

257/192, Field effect transistor257/195, Combined with diverse type device257/E27.012, Made of compound semiconductor material, e.g. III-V material (EPO)257/E29.14, For gate of heterojunction field-effect devices (EPO)257/E29.252With direct single heterostructure (i.e., with wide bandgap layer formed on top of active layer (e.g., direct single heterostructure MIS-like HEMT)) (EPO)

Examiners

Primary: James, Andrew J.
Assistant: Prenty, Mark V.

Attorney, Agent or Firm

Dahle; Omund R.

International Classes

H01L 29/66 (20060101)
H01L 29/40 (20060101)
H01L 29/43 (20060101)
H01L 27/06 (20060101)
H01L 29/778 (20060101)

Abstract

A complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which both the n-channel and p-channel transistors utilize a two-dimensional electron (hole) gas in undoped high mobility channels to form planar, complementary GaAs-based integrated circuits.

Other References

IEEE Electron Device Letters, Apr. 1984, pp. 129-131, by Cirillo et al
Patent Abstracts of Japan, vol. 7, #161, Nov. 1983
IBM Technical Disclosure Bulletin, vol. 27, No. 9, Feb. 85, pp. 5064-5066, J. Y. F. Tang et al., "GaAs Gate Field-Effect Transistor Fabrication"
IEEE Transactions on Electron Devices, vol. ED-31, No. 11, Nov. '84, pp. 1662-1667, R. Dinge, "New High-Speed III-V Devices for Integrated Circuits"
Japanese Journal of Applied Physics, vol. 24, No. 5, May '85, pp. L335-L337, K. Oe et al., "A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas"
Katayama et al., "A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure", Jpn. J. Appl. Phys., vol. 23, L150-2 Mar. '84
Solomon et al., "A GaAs Gate Heterojunction FET", IEEE Electron Device Letters, vol. 5, No. 9, Sep. '84, pp. 379-380
Kiehl et al., "Complementary p-MODFET and n-HB MESFET (Al,Ga)As Transistors", IEEE Electron Device Letters, vol. EDL-5, No. 12, Dec. '84, pp. 521-523
Kiehl et al., "Complementary p-MODFET and n-HB MESFET (Al,Ga)As Fets", IEDM '84, pp. 854-855
Zuleeg et al., "Double-Implanted GaAs Complementary JFETs" IEEE Electron Device Letters, vol. EDL-5, No. 1, Jan. '84, pp. 21-23