Method for the manufacture of thin-film capacitors
Patent 4814289 Issued on March 21, 1989. Estimated Expiration Date: 
December 21, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 21, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3781549 3796926 Laser annealed dielectric for dual dielectric capacitor Patent #: 4437139 InventorApplicationNo. 07/135482 filed on 12/21/1987US Classes:438/396, Stacked capacitor257/532, Including capacitor component427/582Photoinitiated chemical vapor deposition (i.e., photo CVD)ExaminersPrimary: Hearn, Brian E.Assistant: Bunch, William Attorney, Agent or FirmInternational ClassesH01G 4/08 (20060101)H01G 4/30 (20060101) Foreign Application Priority Data1984-11-23 DEAbstractThin-film capacitors are produced with laser chemical vapor deposition technology on a substrate, which is preferably the substrate of an integrated circuit, by forming alternating layers of electrodes and dielectric.Other References
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