Semiconductor device having stacking structure
Patent 4807021 Issued on February 21, 1989. Estimated Expiration Date: 
March 5, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 5, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for forming elongated solder connections between a semiconductor device and a supporting substrate Patent #: 4545610 InventorApplicationNo. 07/022371 filed on 03/05/1987US Classes:257/777, Chip mounted on chip257/738, Ball shaped257/E23.021, Bump or ball contacts (EPO)257/E25.011Devices being arranged next and on each other, i.e., mixed assemblies (EPO)ExaminersPrimary: Edlow, Martin H.Assistant: Limanek, Robert P. Attorney, Agent or FirmInternational ClassesH01L 25/065 (20060101)H01L 23/485 (20060101) H01L 23/48 (20060101) Foreign Application Priority Data1986-03-10 JPAbstractA semiconductor device includes a base semiconductor structure including semiconductor elements, interconnection layers for connecting the semiconductor elements together, and conductive pads to which the interconnection layers are connected, at least one stacking semiconductor structure including semiconductor elements, an interconnection layer for connecting the semiconductor elements together, and conductive pads to which the interconnection layers are connected, the stacking semiconductor structure having holes selectively formed therein to expose portions of the conductive pads, first conductive elements fixed in the holes of the stacking semiconductor structure, to be electrically connected to the exposed portions of the conductive pads, and second conductive elements fixed on the conductive pads of the base semiconductor structure, and fixed to the first conductive elements, with a gap provided between the base and stacking semiconductor structures.Other References
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