In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection
January 25, 2008. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3063206 3874959 Apparatus for automatic lapping control Apparatus for automatic lapping control Method of controlling a plasma etching process by monitoring the impedance changes of the RF power Method for detecting the end point of a plasma etching reaction End point detection method for physical etching process Apparatus for automatic lapping control Methods of highlighting pinholes in a surface layer of an article Monitoring technique for plasma etching InventorsAssigneeApplicationNo. 07/147422 filed on 01/25/1988US Classes:438/17, Electrical characteristic sensed156/345.13, With measuring, sensing, detection or process control means216/86, By electrical means or of an electrical property438/13Altering electrical property by material removalExaminersPrimary: Powell, William A.Attorney, Agent or FirmInternational ClassesB24B 37/04 (20060101)B24B 49/04 (20060101) B24B 49/02 (20060101) B24B 49/10 (20060101) G01N 27/04 (20060101) AbstractAn apparatus and method for monitoring the conductivity of a semiconductor wafer during the course of a polishing process. A polishing pad that contacts the wafer has an active electrode and at least one passive electrode, both of which are embedded in the polishing pad. A detecting device is connected to the active and passive electrodes for monitoring the current between the electrodes as the wafer is lapped by the polishing pad. The etch endpoint of the wafer is determined as a function of the magnitude of the current flow.Other References
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