Method of making silicon capacitive pressure sensor with glass layer between silicon wafers
October 30, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3372070 3397278 3589965 Deep diode lead throughs Capacitive pressure transducer Capacitive pressure sensor and method of making it Capacitive pressure transducer with cut out conductive plate Method for manufacturing variable capacitance pressure transducers Capacitive pressure transducer assembly with improved output lead design Method for manufacturing variable capacitance pressure transducers InventorAssigneeApplicationNo. 06/924720 filed on 10/30/1986US Classes:156/89.15, Nitride compound containing156/272.2, With direct application of electrical, magnetic, or radiant energy to work29/621.1, Strain gauge making361/283.4, By diaphragm73/718, Capacitive73/724CapacitiveExaminersPrimary: Ball, Michael W.Assistant: Aftergut, Jeff H. Attorney, Agent or FirmInternational ClassesB81B 7/00 (20060101)G01L 9/00 (20060101) AbstractA method of bonding two silicon wafers each having a capacitive plate. Two highly-doped electrically semiconductive feedthrough paths are formed through one wafer, each path contacting one of the capacitive plates. A glass layer is formed on one of the silicon wafers where bonding is desired between the two wafers. The glass layer is anodically bonded to the other of the silicon layers. | |
