Plasma treatment apparatus
Patent 4767641 Issued on August 30, 1988. Estimated Expiration Date: 
July 3, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 3, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesPlasma reactor apparatus Sputter-etching device Etching plasma generator diffusor and cap Amorphous silicon film forming apparatus Hollow cathode enhanced plasma for high rate reactive ion etching and deposition Patent #: 4637853 InventorsAssigneeApplicationNo. 06/881706 filed on 07/03/1986US Classes:427/569, Plasma (e.g., corona, glow discharge, cold plasma, etc.)118/50.1, With means to apply electrical and/or radiant energy to work and/or coating material118/715, GAS OR VAPOR DEPOSITION118/723E, Having glow discharge electrodes (e.g., DC, AC, RF, etc.)118/729, Moving work support156/345.43, Having glow discharge electrode gas energizing means204/298.31, Etching204/298.33, Specified gas feed or withdrawal204/298.35, Multi-chamber, load/unload means or moving workpiece216/71, Specific configuration of electrodes to generate the plasma315/111.21, Plasma generating427/580Electrical discharge (e.g., arcs, sparks, etc.)ExaminersPrimary: Lacey, David L.Attorney, Agent or FirmInternational ClassesB29C 59/14 (20060101)B29C 59/00 (20060101) H01J 37/32 (20060101) Foreign Application Priority Data1986-03-04 DEAbstractDevice for the plasma treatment of substrates (7) in a high frequency-excited plasma discharge between two electrodes (3, 8), supplied by a high-frequency source (6). The first electrode is constructed as a hollow anode (3) and the second electrode (8), which carries the substrate (7), is deposited in front of the hollow space (10) of the hollow anode or can be passed by this. Moreover, the hollow anode (3) has an edge (9), which is drawn out in the direction of the second electrode (8) and which, relative to the second electrode, forms a gap s1 all around that does not exceed 10 mm in width. In order to form the electrode so that the gap width is not a critical feature, projections (12) are disposed in the hollow space (10) of the hollow anode (3), said projections increasing the internal surface area (11) of the hollow anode (3). Preferably, these projections (12) are constructed as rib structures, which may also assume a honeycomb form. |
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