Heterostructure devices including tapered optical couplers
Double channel planar buried heterostructure laser with periodic structure formed in guide layer Patent #: 4575851
ApplicationNo. 06/916498 filed on 10/08/1986
US Classes:372/45.01, Particular confinement layer257/E31.059, Device comprising active layer formed only by Group III-V compound (EPO)372/50.21, Having photodetection means372/96, Distributed feedback372/97Plural cavities
ExaminersPrimary: Davie, James W.
Assistant: Epps, Georgia
Attorney, Agent or Firm
International ClassesH01S 5/10 (20060101)
G02B 6/12 (20060101)
H01L 31/103 (20060101)
H01S 5/00 (20060101)
H01L 31/102 (20060101)
H01S 5/12 (20060101)
H01S 5/04 (20060101)
AbstractA grating in the upper reflecting layer (103 or 203) of an antiresonant reflecting optical waveguide is used to extract energy of a selected wavelength from the waveguiding layer (102 or 202) into the reflecting layer. In one embodiment the reflecting layer (103) is designed as a gain medium which is pumped in the region of a grating (120) and optically terminated at each end of the device such that the embodiment serves as a laser having a long cavity provided by the waveguiding layer (102) with the gain provided in the short grating region. In a second embodiment the reflecting layer (203) in the region of a grating (211) has an opposite conductivity dopant from that of the waveguiding layer (202) such that the device in this region may be backbiased to serve as a wavelength selective photodetector. By placing two wavelength photodetectors in tandem with gratings (211 and 212)of different pitches a wavelength demultiplexing photodetector is provided.